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Volumn 96, Issue 10, 2010, Pages

Near-ultraviolet light emitting diodes using strained ultrathin InN/GaN quantum well grown by metal organic vapor phase epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

BAND FILLING EFFECTS; BLUE SHIFT; EMISSION PEAKS; INGAN-BASED LED; INTER-DIFFUSION; LOCALIZED STATE; MANY-BODY EFFECT; METAL-ORGANIC VAPOR PHASE EPITAXY; PULSED INJECTION; QUANTUM CONFINED STARK EFFECT; QUANTUM WELL; RED SHIFT; SATELLITE PEAKS; SOLID STATE LIGHTING; ULTRA-THIN; ULTRAVIOLET LIGHT EMITTING DIODES; UV EMISSIONS; X-RAY DIFFRACTION MEASUREMENTS; YELLOW LUMINESCENCE;

EID: 77949721703     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3360199     Document Type: Article
Times cited : (26)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.