A near-infrared range photodetector based on indium nitride nanocrystals obtained through laser ablation

IEEE Electron Device Letters

Volumn 35, Issue 9, 2014, Pages 936-938

  Tekcan, Burak ^a   Alkis, Sabri ^a   Alevli, Mustafa ^b   Dietz, Nikolaus ^a   Ortac, Bulend ^a   Biyikli, Necmi ^a,c   Okyay, Ali Kemal ^c  

^a BILKENT UNIVERSITY   (Turkey)

^b MARMARA UNIVERSITY   (Turkey)

^c GEORGIA STATE UNIVERSITY   (United States)

Author keywords

indium nitride; nanocrystals; near infrared (NIR); Photodetector

Indexed keywords

CHEMICAL VAPOR DEPOSITION; LASER ABLATION; NANOCRYSTALS; PHOTODETECTORS; PHOTONS; THIN FILMS;

ELECTRICAL LEAKAGE; HIGH PRESSURE CHEMICAL VAPOR DEPOSITION; INDIUM NITRIDE; NEAR INFRA RED; NEAR-INFRARED RANGE; PHOTORESPONSIVITY; THIN INSULATING FILM; WAVELENGTH RANGES;

INFRARED DEVICES;

EID: 84906948222     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2014.2336795     Document Type: Article

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