Ultraviolet electroluminescence from n-ZnO/p-NiO heterojunction light-emitting diode

Journal of Luminescence

Volumn 134, Issue , 2013, Pages 240-243

  Deng, R ^a,b   Yao, B ^a   Li, Y F ^a   Xu, Y ^a   Li, J C ^a   Li, B H ^c   Zhang, Z Z ^c   Zhang, L G ^c   Zhao, H F ^c   Shen, D Z ^c  

^a JILIN UNIVERSITY   (China)

^b CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

Electroluminescence; Heterojucntions; Light emitting diode; Thin films

Indexed keywords

BAND EDGE; C-PLANE SAPPHIRE; FORWARD BIAS; HETEROJUCNTIONS; INJECTION CURRENTS; NIO FILMS; P-TYPE NIO; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; RADIATIVE RECOMBINATION; RF-MAGNETRON SPUTTERING; ULTRAVIOLET ELECTROLUMINESCENCE; UV EMISSIONS; ZNO FILMS; ZNO LAYERS;

DIODES; ELECTRIC RECTIFIERS; ELECTROLUMINESCENCE; HETEROJUNCTIONS; MAGNETRON SPUTTERING; MOLECULAR BEAM EPITAXY; THIN FILMS; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 84869502666     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2012.08.039     Document Type: Article

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