Dominant ultraviolet electroluminescence from p-ZnO:As/n-SiC(6H) heterojunction light-emitting diodes

Applied Physics Letters

Volumn 100, Issue 10, 2012, Pages

  Shi, Zhifeng ^a   Xia, Xiaochuan ^b   Yin, Wei ^a   Zhang, Shikai ^a   Wang, Hui ^a   Wang, Jin ^a   Zhao, Long ^a   Dong, Xin ^a   Zhang, Baolin ^a   Du, Guotong ^a,b  

^a JILIN UNIVERSITY   (China)

^b DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC ATOM; FORWARD BIAS; GAAS; LOW TEMPERATURE PHOTOLUMINESCENCE; OUT-DIFFUSION; P-TYPE DOPING; ROOM TEMPERATURE; SIC SUBSTRATES; ULTRAVIOLET ELECTROLUMINESCENCE; ULTRAVIOLET EMISSION; ZNO;

ARSENIC; DIODES; ELECTROLUMINESCENCE; LIGHT EMISSION; LIGHT EMITTING DIODES; SILICON CARBIDE; ZINC OXIDE;

HETEROJUNCTIONS;

EID: 84863371357     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3694025     Document Type: Article

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