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Journal of Applied Physics

Volumn 117, Issue 15, 2015, Pages

Influence of interface potential on the effective mass in Ge nanostructures

(6) Barbagiovanni, E G a Cosentino, S a Lockwood, D J b Costa Filho, R N c Terrasi, A a Mirabella, S a

a UNIVERSITY OF CATANIA (Italy)

b NATIONAL RESEARCH COUNCIL CANADA (Canada)

c FEDERAL UNIVERSITY OF CEARÁ (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; MOLECULAR BEAM EPITAXY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR QUANTUM DOTS;

CONFINEMENT ENERGY; COSPUTTERING; EFFECTIVE MASS; GE NANOSTRUCTURES; GE QUANTUM DOT; INTERFACE POTENTIALS; LENGTH SCALE; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITIONS (PECVD);

INTERFACE STATES;

EID: 84928138717 PISSN: 00218979 EISSN: 10897550 Source Type: Journal
DOI: 10.1063/1.4918549 Document Type: Article

Times cited : (12)

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