Interband optical properties of silicon [001] quantum wells using a two-conduction-band k p model

Applied Physics Letters

Volumn 99, Issue 22, 2011, Pages

  Michelini, Fabienne ^a   Ouerghi, Issam ^a  

^a AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SCALE; CONDUCTION-BAND MINIMUM; FIRST PRINCIPLE CALCULATIONS; INDIRECT-GAP NATURE; INTERBAND OPTICAL PROPERTIES; OPTICAL MATRIX ELEMENT; P-MODEL; ULTRA-THIN;

OPTICAL PROPERTIES; ULTRATHIN FILMS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 82955201560     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3663974     Document Type: Article

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