Quantum confinement by an order-disorder boundary in nanocrystalline silicon

Physical Review Letters

Volumn 104, Issue 17, 2010, Pages

  Bagolini, L ^a,b   Mattoni, A ^b   Fugallo, G ^b,c   Colombo, L ^b,c   Poliani, E ^d   Sanguinetti, S ^d   Grilli, E ^d  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

^b IOM CNR LABORATORIO TASC   (Italy)

^c UNIVERSITY OF CAGLIARI   (Italy)

^d UNIVERSITY OF MILANO BICOCCA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CONTROLLED GRAIN SIZE; HYDROGENATED NANOCRYSTALLINE SILICON; NANO GRAINS; NANOCRYSTALLINE SAMPLE; ORDER-DISORDER; PHOTOVOLTAICS; POSITIVELY CHARGED; PROMISING MATERIALS; SILICON-BASED; VALENCE STATE;

OXYGEN; QUANTUM CONFINEMENT;

NANOCRYSTALLINE SILICON;

EID: 77951615752     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.104.176803     Document Type: Article

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