Defect engineering of Si nanocrystal interfaces and the temperature dependence of the band gap of size selected Si nanocrystals

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 12, 2012, Pages 2449-2454

  Zacharias, Margit ^a   Hiller, Daniel ^a   Hartel, Andreas ^a   Gutsch, Sebastian ^a  

^a UNIVERSITY OF FREIBURG   (Germany)

Author keywords

defect passivation; interface defects; Si band gap; Si nanocrystals

Indexed keywords

BLUE SHIFT; DEFECT ENGINEERING; DEFECT PASSIVATION; EXCITON RECOMBINATION; INTERFACE DEFECTS; MODEL SYSTEM; NONRADIATIVE DEFECTS; QUANTUM PROPERTIES; SI BAND GAP; SI NANOCRYSTAL; SIZE DEPENDENT; SUPERLATTICE APPROACH; SURFACE PASSIVATION; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT;

DEFECTS; ENERGY GAP; NANOCRYSTALS; OPTICAL PROPERTIES;

SILICON;

EID: 84871193746     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201200734     Document Type: Article

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