Role of quantum confinement in luminescence efficiency of group IV nanostructures

Journal of Applied Physics

Volumn 115, Issue 4, 2014, Pages

  Barbagiovanni, E G ^a,f   Lockwood, D J ^b   Rowell, N L ^b   Costa Filho, R N ^c   Berbezier, I ^d   Amiard, G ^d   Favre, L ^d   Ronda, A ^d   Faustini, M ^e   Grosso, D ^e  

^a Beijing GeoScience Center Schlumberger   (China)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

^d CNRS   (France)

^e Centre de Recherche Interdisciplinaire en Biologie   (France)

^f INSTITUTO SUPERIOR TÉCNICO   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

EFFICIENCY; GERMANIUM; QUANTUM CONFINEMENT; SEMICONDUCTOR QUANTUM DOTS;

BOHR RADIUS; EFFECTIVE MASS; GE QUANTUM DOT; INTERFACE SCATTERING; LOG-LOG PLOTS; LUMINESCENCE EFFICIENCIES; PHOTOLUMINESCENCE EFFICIENCY; QUANTUM CONFINEMENT EFFECTS;

QUANTUM EFFICIENCY;

EID: 84979231266     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4863397     Document Type: Article

References (22)

1. V. Aroutiounian, S. Petrosyan, A. Khachatryan, and K. Touryan, J. Appl. Phys. 89, 2268 (2001). 10.1063/1.1339210
2. W. D. A. M. de Boer, D. Timmerman, K. Dohnalova, I. N. Yassievich, H. Zhang, W. J. Buma, and T. Gregorkiewicz, Nat. Nanotechnol. 5, 878 (2010). 10.1038/nnano.2010.236
3. E. G. Barbagiovanni, D. J. Lockwood, P. J. Simpson, and L. V. Goncharova, Appl. Phys. Rev. 1, 011302 (2014). 10.1063/1.4835095
4. B. Averboukh, R. Huber, K. W. Cheah, Y. R. Shen, G. G. Qin, Z. C. Ma, and W. H. Zong, J. Appl. Phys. 92, 3564 (2002). 10.1063/1.1498960
5. M. J. Süess, R. Geiger, R. A. Minamisawa, G. Schiefler, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, and H. Sigg, Nat. Photonics 7, 466 (2013). 10.1038/nphoton.2013.67
6. L. Mangolini, J. Vac. Sci. Technol., B 31, 020801 (2013). 10.1116/1.4794789
7. E. G. Barbagiovanni, D. J. Lockwood, P. J. Simpson, and L. V. Goncharova, J. Appl. Phys. 111, 034307 (2012). 10.1063/1.3680884
8. S. Cosentino, M. Miritello, I. Crupi, G. Nicotra, F. Simone, C. Spinella, A. Terrasi, and S. Mirabella, Nanoscale Res. Lett. 8, 128 (2013). 10.1186/1556-276X-8-128
9. L. Tsybeskov and D. J. Lockwood, Proc. IEEE 97, 1284 (2009). 10.1109/JPROC.2009.2020711
10. Y. M. Niquet, G. Allan, C. Delerue, and M. Lannoo, Appl. Phys. Lett. 77, 1182 (2000). 10.1063/1.1289659
11. S. Mirabella, S. Cosentino, M. Failla, M. Miritello, G. Nicotra, F. Simone, C. Spinella, G. Franzò, and A. Terrasi, Appl. Phys. Lett. 102, 193105 (2013). 10.1063/1.4805356
12. D. Kovalev, H. Heckler, M. Ben-Chorin, G. Polisski, M. Schwartzkopff, and F. Koch, Phys. Rev. Lett. 81, 2803 (1998). 10.1103/PhysRevLett.81.2803
13. D. J. Lockwood, N. L. Rowell, E. G. Barbagiovanni, L. V. Goncharova, P. J. Simpson, I. Berbezier, G. Amiard, L. Favre, A. Ronda, M. Faustini, and D. Grosso, ECS Trans. 53, 185 (2013). 10.1149/05301.0185ecst
14. E. G. Barbagiovanni and R. N. C. Filho, "Quantum Confinement in Nonadditive Space with a Spatially Dependent Effective Mass for Si and Ge Quantum Wells," e-print arXiv:1311.5335.
15. A. S. Moskalenko, J. Berakdar, A. A. Prokofiev, and I. N. Yassievich, Phys. Rev. B 76, 085427 (2007). 10.1103/PhysRevB.76.085427
16. G. Seguini, C. Castro, S. Schamm-Chardon, G. BenAssayag, P. Pellegrino, and M. Perego, Appl. Phys. Lett. 103, 023103 (2013). 10.1063/1.4813743
17. P. Y. Yu and M. Cardona, Fundamentals of Semiconductors: Physical and Material Properties, 3rd ed. (Springer, Berlin, 2001).
18. N. A. Cukarić, M. Z. Tadić, B. Partoens, and F. M. Peeters, Phys. Rev. B 88, 205306 (2013). 10.1103/PhysRevB.88.205306
19. F. Michelini and I. Ouerghi, Appl. Phys. Lett. 99, 221912 (2011). 10.1063/1.3663974
20. F. Iacona, G. Franzo, and C. Spinella, J. Appl. Phys. 87, 1295 (2000). 10.1063/1.372013
21. A. Sa'ar, Y. Reichman, M. Dovrat, D. Krapf, J. Jedrzejewski, and I. Balberg, Nano Lett. 5, 2443 (2005). 10.1021/nl051740e
22. U. S. Sias, E. C. Moreira, E. Ribeiro, H. Boudinov, L. Amaral, and M. Behar, J. Appl. Phys. 95, 5053 (2004). 10.1063/1.1691182