Chapter 2 Transmission and Reflection Spectroscopy on Ion Implanted Semiconductors

Semiconductors and Semimetals

Volumn 46, Issue C, 1997, Pages 39-71

  Seas, Antonios ^a   Christofides, Constantinos ^a  

^a UNIVERSITY OF CYPRUS   (Cyprus)

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTED; REFLECTION SPECTROSCOPY;

TRANSMISSIONS;

EID: 77956655105     PISSN: 00808784     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S0080-8784(08)60105-2     Document Type: Article

References (43)

1. Brierley S.K., Lehn D.S., and Grabinski A.K. Implant-Dose Mapping Using Infrared Transmission. J. Appl. Phys. 63 (1988) 5085-5087
2. Brown R.L., Schoonveld L., Abels L.L., Sundaram S., and Raccah P.M. Electroreflectance of Ion-Implanted GaAs. J. Appl. Phys. 52 (1981) 2950-2957
3. Chapman P.W., Tufte O.N., Zook J.D., and Long D. Electrical Properties of Heavily Doped Silicon. J. Appl. Phys. 34 (1963) 3291
4. Christofides C. Annealing Kinetics of Defects of Ion-Implanted and Furnace-Annealed Silicon Layers: Thermodynamic Approach. Semicond. Sci. Technol. 7 (1992) 1283-1294
5. Christofides C., Guibaudo G., and Jaouen H. Etude de silicium implanté à l'arsenic par effet de transport. Influence du recuit thermique. Revue Phys. Appl. 22 (1987) 407-412
6. Christofides C., Jaouen H., and Guibaudo G. Electronic Transport Investigation of Arsenic-Implanted Silicon. I. Annealing Influence on the Transport Coefficients. J. Appl. Phys. 65 (1989) 4832-4839
7. Christofides C., Guibaudo G., and Jaouen H. Electronic Transport Investigation of Arsenic-Implanted Silicon. II. Annealing Kinetics of Defects. J. Appl. Phys. 65 (1989) 4840-4844
8. Christofides C., Othonos J.B.A., and Bisson Boussey-Said M. Optical Spectroscopy on Implanted and Annealed Silicon Wafers: Plasma Resonance Wavelength. J. Appl. Phys. 75 (1994) 3377-3384
9. Christofides C., Seas A., and Othonos A. Reconstruction Mechanisms in Ion Implanted and Annealed Silicon Wafers. Defects Diffusion Forum 117 (1995) 45-64
10. Crowder B.L., Title R.S., Brodskey M.H., and Pettit G.D. ESR and Optical Absorption Studies of Ion-Implanted Silicon. Appl. Phys. Lett. 16 (1970) 205-208
11. Engstrom H. Infrared Reflective and Transmissivity of Boron-Implanted, Laser-Anneaied Silicon. J. Appl. Phys. 51 (1980) 5245-5249
12. Fredrickson J.E., Waddell C.N., Spitzer W.G., and Hubler G.K. Effect of Thermal Annealing of the Refractive Index of Amorphous Silicon Produced by Ion Implantation. Appl. Phys. Lett. 40 (1982) 172-174
13. Gibbons J.F. Ion Implantation in Semiconductors. Part I: Range Distribution Theory and Experiments. Proc. IEEE 56 (1968) 295-320
14. Gibbons J.F. Ion Implantation in Semiconductors. Part II: Damage Production and Annealing. Proc. IEEE 60 (1972) 1062-1096
15. Hart R.R., and Marsh O.J. Changes of Optical Reflectivity (1.8 to 2.2 eV) Induced by 40-keV Antimony Ion Bombardment of Silicon. Appl. Phys. Lett. 14 (1969) 225-226
16. O.S. Heavens. 1964 Optical Properties of Thin Films. Butterworths London 77-79
17. Howarth L.E., and Gilbert J.F. Solid State Commun. 10 (1962) 236-237
18. Hubler G.K., Waddell C.N., Spitzer W.G., Fredrickson J.E., Prussin S., and Wilson R.G. High-Fluence Implantations of Silicon: Layer Thickness and Refractive Indices. J. Appl. Phys. 50 (1979) 3294-3303
19. Hubler G.K., Malmberg P.R., and Smith T.P. Refractive Index Profiles and Range Distributions of Silicon Implanted with High-Energy Nitrogen. J. Appl. Phys. 50 (1979) 7147-7155
20. Hubler G.K., Malmberg P.R., Waddell C.N., Spitzer W.G., and Fredrickson J.E. Electrical and Structural Characterization of Implantation Doped Silicon by Infrared Reflection. Radiation Effects 60 (1982) 35-47
21. Hummel R.E., Xi W., Holloway P.H., and Jones K.A. Optical Investigations of Ion Implant Damage in Silicon. J. Appl Phys. 63 (1988) 2591-2594
22. Irvin J.C. Resistivity of Bulk Silicon and of Diffused Layers in Silicon. Bell Systems Tech. J. 41 (1962) 387-410
23. Kachare A.H., Spitzer W.G., Euler F.K., and Kahan A. Infrared Reflection of Ion-Implanted GaAs. J. Appl. Phys. 45 (1974) 2938-2946
24. Kachare A.H., Spitzer W.G., Fredrickson J.E., and Euler F.K. Measurements of layer thicknesses and refractive indices in high-energy ion-implantation GaAs and GaP. J. Appl. Phys. 47 (1976) 5374-5381
25. Kachare A.H., Spitzer W.G., and Fredrickson J.E. Refractive Index of Ion-Implanted GaAs. J. Appl. Phys. 47 (1976) 4209-4212
26. Kireev P. The Physics of Semiconductors (1975), Mir, Moscow
27. Kivelsen S., and Gelatt Jr. C.D. Phys. Rev. B19 (1979) 5160-5177
28. Kurtin S., Shifrin G.A., and McGill T.C. Ion Implantation Damage of Silicon as Observed by Optical Reflection Spectroscopy in the 1 to 6 eV Region. Appl. Phys. Lett. 14 (1969) 223-225
29. Kwun S., Spitzer W.G., Anderson C.L., Dunlap H.L., and Vaidyanathan K.V. Optical Studies of Be-Implanted GaAs. J. Appl. Phys. 50 (1979) 6873-6880
30. Masetti G., Severi M., and Solmi S. IEEE Trans. Electron Devices ED-30 (1983) 764-769
31. Othonos A., Christofides C., Boussey-Said J., and Bisson M. Raman Spectroscopy and Spreading Resistance Analysis of Phosphorus Implanted and Annealed Silicon. J. Appl. Phys. 75 (1994) 8032-8038
32. Prussin S., Margolese D., and Tauber R.N. Formation of Amorphous Layers by Ion Implantation. J. Appl. Phys. 57 (1985) 180-185
33. Seas A., Eleftheriou M.-E., Christofides C., and Theocharis C.R. Infrared Spectroscopy and Electrical Characterization of Phosphorus Implanted and Annealed Silicon Layers. Nucl. Instrum. Meth. Phys. Res. B103 (1995) 46-55
34. Seeger K. In: Cardona M., Fudle P., von Klitzing K., and Queisser H.J. (Eds). Semiconductor Physics. 4th ed. (1988), Springer-Verlag, Berlin, New York, Paris, Tokyo Springer Series in Solid State Sciences 40 Chapt. 11
35. Smith R.A. Semiconductors (1959), Cambridge University Press, Cambridge
36. Spitzer W.G., Waddell C.N., Narayanan G.H., Fredrickson J.E., and Prussin S. Free-Carrier Plasma Effects in Ion-implanted Amorphous Layers of Silicon. Appl. Phys. Lett. 30 (1977) 623-626
37. Street R.A. Hydrogenated Amorphous Silicon (1991), Cambridge University Press, Cambridge Chapt. 5
38. Tatarkiewicz J. Optical Effects of High Energy Implantations in Semiconductors. Phys. Status Solidi (b) 153 (1989) 11-47
39. Schumann Jr. P.A., and Phillips R.P. Comparison of Classical Approximations to Free Carrier Absorption in Semiconductors. Solid State Electron 10 (1967) 943-948
40. Ure R.W. In: Willarson R.K., and Beer A.C. (Eds). Semiconductors and Semimetals 8 (1972), Academic Press, New York 86 Thermoelastic effect in III-V compounds Transport and optical phenomena
41. Waddell C.N., Spitzer W.G., Hubler G.K., and Fredrickson J.E. Infrared Studies of Isothermal Annealing of Ion-Implanted Silicon: Refractive Indices, Regrowth Rates and Carrier Profiles. J. Appl. Phys. 53 (1982) 5851-5862
42. Wagner H.H., and Schaefer R.R. Contactless Probing of Semiconductor Dopant Profile Parameters by IR Spectroscopy. J. Appl. Phys. 50 (1979) 2697-2704
43. Wang K.-W., Spitzer W.G., Hubler G.K., and Donovan E.P. Effect of Annealing on the Optical Properties of Ion-implanted Ge. J. Appl. Phys. 57 (1985) 2739-2751