Scaling size of the interplay between quantum confinement and surface related effects in nanostructured silicon

Applied Physics Letters

Volumn 103, Issue 2, 2013, Pages

  Seguini, G ^a   Castro, C ^b   Schamm Chardon, S ^b   Benassayag, G ^b   Pellegrino, P ^c   Perego, M ^a  

^a LABORATORIO MDM   (Italy)

^b UNIVERSITÉ DE TOULOUSE   (France)

^c UNIVERSITY OF BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION STATE; ENERGY-BAND ALIGNMENT; NANO-STRUCTURED; NANOSCALE CONFIGURATION; NANOSTRUCTURED SILICON; QUANTUM PROPERTIES; SI NANOCRYSTAL; SURFACE EFFECT;

SILICON OXIDES;

QUANTUM CONFINEMENT;

EID: 84880471436     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4813743     Document Type: Article

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