SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 88, Issue 4, 2011, Pages 388-390

Influence of the oxidation temperature on the non-trigonal Ge dangling bonds at the (1 0 0)Ge/GeO2 interface

(3) Baldovino, S a,b Molle, A b Fanciulli, M a,b

a UNIVERSITY OF MILANO BICOCCA (Italy)

b LABORATORIO MDM (Italy)

Author keywords

Electrically detected magnetic resonance; Ge dangling bond; GeO2; Germanium; Interface defects

Indexed keywords

ELECTRICALLY DETECTED MAGNETIC RESONANCES; GE DANGLING BOND; GEO2; HIGH DIELECTRIC CONSTANTS; INTERFACE DEFECTS; OXIDATION TEMPERATURE; PASSIVATION LAYER;

DANGLING BONDS; DEFECTS; LOGIC DEVICES; MAGNETIC RESONANCE; OXIDATION; PARAMAGNETISM; PASSIVATION;

GERMANIUM;

EID: 79751533978 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2010.10.027 Document Type: Conference Paper

Times cited : (4)

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