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Journal of the Electrochemical Society

Volumn 156, Issue 12, 2009, Pages

Photoluminescence efficiency of self-assembled Ge nanocrystals

(5) Rowell, N L a Lockwood, D J a Berbezier, I b Szkutnik, P D b Ronda, A b

a NATIONAL RESEARCH COUNCIL CANADA (Canada)

b AIX MARSEILLE UNIVERSITÉ (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BAND SHAPES; ENERGY SPECTRA; GE NANOCRYSTALS; NEAR-IR; PEAK ENERGY; PHOTOLUMINESCENCE EFFICIENCY; PL BANDS; SELF-ASSEMBLED; SI(0 0 1); THERMAL-ANNEALING; TIGHT BINDING MODEL;

CRYSTAL GROWTH; GERMANIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOCRYSTALS; PHOTOLUMINESCENCE; SILICON COMPOUNDS; SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

SIZE DISTRIBUTION;

EID: 70350732728 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3236402 Document Type: Article

Times cited : (13)

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