Memory programming of TiO 2-x films by Conductive Atomic Force Microscopy evidencing filamentary resistive switching

Applied Surface Science

Volumn 332, Issue , 2015, Pages 55-61

  Bousoulas, P ^a   Giannopoulos, J ^a   Giannakopoulos, K ^b   Dimitrakis, P ^b   Tsoukalas, D ^a  

^a NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

^b INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

Author keywords

Conducting filaments; Conduction mechanisms; Electrical characterization; Non volatile memories; Oxygen vacancies; Resistive memory devices; Sputtering; Thin films

Indexed keywords

ATOMIC FORCE MICROSCOPY; BINARY ALLOYS; CONDUCTIVE FILMS; ELECTROFORMING; HETEROJUNCTIONS; INTERFACE STATES; IRIDIUM ALLOYS; MAGNETRON SPUTTERING; NANOTECHNOLOGY; PLATINUM ALLOYS; RANDOM ACCESS STORAGE; SPUTTERING; SWITCHING; THIN FILMS; TITANIUM DIOXIDE; TITANIUM OXIDES;

CONDUCTING FILAMENT; CONDUCTION MECHANISM; ELECTRICAL CHARACTERIZATION; NON-VOLATILE MEMORY; RESISTIVE MEMORY;

OXYGEN VACANCIES;

EID: 84924176856     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2015.01.133     Document Type: Article

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