Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

Applied Physics Letters

Volumn 101, Issue 19, 2012, Pages

  Lanza, M ^a   Bersuker, G ^b   Porti, M ^a   Miranda, E ^a   Nafria M ^a   Aymerich, X ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE FILAMENTS; CONDUCTIVE PATHS; DEGREES OF CRYSTALLINITY; ENHANCED CONDUCTIVE ATOMIC FORCE MICROSCOPIES; GRAIN BOUNDARY REGIONS; HAFNIUM DIOXIDE; IN-SITU ANALYSIS; MATERIAL CHARACTERISTICS; MEMORY CELL; MORPHOLOGICAL FEATURES; NANO SCALE; NON-VOLATILE; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; SWITCHABLE; SWITCHING PHENOMENON;

DIELECTRIC FILMS; GRAIN BOUNDARIES; HAFNIUM OXIDES;

SWITCHING SYSTEMS;

EID: 84869020672     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4765342     Document Type: Article

References (24)

1. R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater. 21, 2632-2663 (2009). 10.1002/adma.200900375
2. S. H. Chang, S. B. Lee, D. Y. Jeon, S. J. Park, G. T. Kim, S. M. Yang, S. C. Chae, H. K. Yoo, B. S, Kang, M. J. Lee, and T. W. Noh, Adv. Mater. 23, 4063-4067 (2011). 10.1002/adma.201102395
3. C. Rohde, B. J. Choi, D. S. Jeong, S. Choi, J. S. Zhao, and C. S. Hwang, Appl. Phys. Lett. 86, 262907 (2005). 10.1063/1.1968416
4. C. Rossel, G. I. Meijer, D. Bremaud, and D. Widmer, J. Appl. Phys. 90, 2892 (2001). 10.1063/1.1389522
5. I. G. Baek, M. S. Lee, S. Seo, M. J. Lee, D. H. Seo, D. S. Suh, J. C. Park, S. O. Park, H. S. Kim, I. K. Yoo, U. I. Chung, and J. T. Moon, in Technical Digest-International Electron Devices Meeting (IEEE, 2004), p. 587.
6. S. Lee, W. G. Kim, S. W. Rhee, and K. Yong, J. Electrochem. Soc. 155 (2), H92-H96 (2008). 10.1149/1.2814153
7. S. J. Choi, G. S. Park, K. H. Kim, S. Cho, W. Y. Yang, X. S. Li, J. H. Moon, K. J. Lee, and K. Kim, Adv. Mater. 23, 3272-3277 (2011). 10.1002/adma.201100507
8. S. Long, C. Cagli, D. Ielmini, M. Liu, and J. Suñe, IEEE Electron Device Lett. 32, 1570-1572 (2011). 10.1109/LED.2011.2163613
9. Z. Yan, Y. Guo, G. Zhang, and J. M. Liu, Adv. Mater. 23, 1351-1355 (2011). 10.1002/adma.201004306
10. P. S. Lysaght, J. C. Woicik, M. A. Sahiner, S. C. Song, B. H. Lee, and R. Jammy, J. Non-Cryst. Solids 354 (2-9), 399-403 (2008). 10.1016/j.jnoncrysol. 2007.07.050
11. P. S. Lysaght, J. C. Woicik, M. A. Sahiner, B. H. Lee, and R. Jammy, Appl. Phys. Lett. 91, 122910 (2007). 10.1063/1.2789180
12. X. Blasco, M. Nafria, and X. Aymerich, Rev. Sci. Instrum. 76, 016105 (2005). 10.1063/1.1832579
13. J. Pétry, W. Vandervorst, O. Richard, T. Conard, P. DeWolf, V. Kaushik, A. Delabie, and S. Van Elshocht, in Integration of Advanced Micro-and Nanoelectronic Devices-Critical Issues and Solutions, edited by, J. Morais, D. Kumar, M. Houssa, R. K. Singh, D. Landheer, R. Ramesh, R. M. Wallace, S. Guha, and, H. Koinuma, (Mater. Res. Soc. Symp. Proc., 2004), Vol. 811, pp. D6.10.01-D6.10.06.
14. V. Iglesias, M. Porti, M. Nafría, X. Aymerich, P. Dudek, T. Schroeder, and G. Bersuker, Appl. Phys. Lett. 97, 262906 (2010). 10.1063/1.3533257
15. M. Porti, M. Nafria, M. C. Blum, X. Aymerich, and S. Sadewasser, Appl. Phys. Lett. 81, 3615-3617 (2002). 10.1063/1.1519357
16. G. Bersuker, J. Yum, L. Vandelli, A. Padovani, L. Larcher, V. Iglesias, M. Porti, M. Nafría, K. McKenna, A. Shluger, P. Kirsch, and R. Jammy, Solid-State Electron. 65-66, 146-150 (2011). 10.1016/j.sse.2011.06.031
17. V. Iglesias, M. Lanza, K. Zhang, A. Bayerl, M. Porti, M. Nafría, X. Aymerich, G. Benstteter, Z. Y. Shen, and G. Bersuker, Appl. Phys. Lett. 99, 103510 (2011). 10.1063/1.3637633
18. L. Aguilera, W. Polspoel, A. Volodin, C. Van Haesendonck, M. Porti, W. Vandervorst, M. Nafria, and X. Aymerich, in International Reliability Physics Symposium (IEEE, 2008), pp. 657-658.
19. V. Cosnier, P. Besson, V. Loup, L. Vandroux, S. Minoret, M. Cassé, X. Garros, J. M. Pedini, S. Lhostis, K. Dabertrand, C. Morin, C. Wiemer, M. Perego, and M. Fanciulli, Microelectron. Eng. 84, 1886-1889 (2007). 10.1016/j.mee.2007.04.041
20. F. Bohra, B. Jiang, and J. M. Zuo, Appl. Phys. Lett. 90, 161917 (2007). 10.1063/1.2724925
21. G. Bersuker, D. C. Gilmer, D. Veksler, J. Yum, H. Park, S. Lian, L. Vandelli, A. Padovani, L. Larcher, K. McKenna, A. Shluger, V. Iglesias, M. Porti, M. Nafría, W. Taylor, P. D. Kirsch, and R. Jammy, in Technical Digest-International Electron Devices Meeting (IEEE, 2010), pp. 456-459.
22. K. McKenna and A. Shluger, Appl. Phys. Lett. 95, 222111 (2009). 10.1063/1.3271184
23. L. Vandelli, A. Padovani, L. Larcher, R. G. Southwick III, W. B. Knowlton, and G. Bersuker, IEEE Trans. Electron Devices 58, 2878-2887 (2011). 10.1109/TED.2011.2158825
24. G. Bersuker, D. C. Gilmer, D. Veksler, P. Kirsch, L. Vandelli, A. Padovani, L. Larcher, K. McKenna, A. Shluger, V. Iglesias, M. Porti, and M. Nafria, J. Appl. Phys. 110, 124518 (2011). 10.1063/1.3671565