Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO 2/Pt structures

Microelectronics Reliability

Volumn 52, Issue 9-10, 2012, Pages 2110-2114

  Iglesias, V ^a   Lanza, M ^a   Bayerl, A ^a   Porti, M ^a   Nafria M ^a   Aymerich, X ^a   Liu, L F ^b   Kang, J F ^b   Bersuker, G ^c   Zhang, K ^b   Shen, Z Y ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b PEKING UNIVERSITY   (China)

^c SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE ATOMIC FORCE MICROSCOPES; CONDUCTIVE FILAMENTS; HIGH RESISTIVE STATE; LOW CONDUCTIVITY; METAL-INSULATOR-METAL STRUCTURES; MIM STRUCTURE; NANO SCALE; POLYCRYSTALLINE; RESISTIVE STATE; RESISTIVE SWITCHING; SMALL AREA;

ATOMIC FORCE MICROSCOPY; ELECTRIC INSULATORS; ELECTRON EMISSION; GRAIN BOUNDARIES; HAFNIUM OXIDES; NANOTECHNOLOGY; PLATINUM; SWITCHING SYSTEMS;

MIM DEVICES;

EID: 84866734104     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2012.06.073     Document Type: Article

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