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Volumn 3, Issue 8, 2013, Pages

The resistive switching in TiO2 films studied by conductive atomic force microscopy and Kelvin probe force microscopy

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC FIELDS; OXIDE MINERALS; PROBES; TITANIUM DIOXIDE;

EID: 84883891464     PISSN: None     EISSN: 21583226     Source Type: Journal    
DOI: 10.1063/1.4818119     Document Type: Article
Times cited : (44)

References (25)
  • 1
    • 41149099157 scopus 로고    scopus 로고
    • Materials science: Who wins the nonvolatile memory race?
    • DOI 10.1126/science.1153909
    • G. I. Meijer, Science 319, 1625 (2008). 10.1126/science.1153909 (Pubitemid 351432488)
    • (2008) Science , vol.319 , Issue.5870 , pp. 1625-1626
    • Meijer, G.I.1
  • 2
    • 84883851407 scopus 로고    scopus 로고
    • International Technology Roadmafor Semiconductors, ITRS 2009 edition.
    • International Technology Roadmap for Semiconductors, ITRS 2009 edition (2009).
    • (2009)
  • 3
    • 34147108217 scopus 로고    scopus 로고
    • Evidence for an oxygen diffusion model for the electric pulse induced resistance change effect in transition-metal oxides
    • DOI 10.1103/PhysRevLett.98.146403
    • Y. B. Nian, J. Strozier, N. J. Wu, X. Chen, and A. Ignatiev, Phys. Rev. Lett. 98, 146403 (2007). 10.1103/PhysRevLett.98.146403 (Pubitemid 46557459)
    • (2007) Physical Review Letters , vol.98 , Issue.14 , pp. 146403
    • Nian, Y.B.1    Strozier, J.2    Wu, N.J.3    Chen, X.4    Ignatiev, A.5
  • 8
    • 35748974883 scopus 로고    scopus 로고
    • Nanoionics-based resistive switching memories
    • DOI 10.1038/nmat2023, PII NMAT2023
    • R. Waser and M. Aono, Nat. Mater. 6, 833 (2007). 10.1038/nmat2023 (Pubitemid 350064191)
    • (2007) Nature Materials , vol.6 , Issue.11 , pp. 833-840
    • Waser, R.1    Aono, M.2
  • 10
    • 43549126477 scopus 로고    scopus 로고
    • Resistive switching in transition metal oxides
    • DOI 10.1016/S1369-7021(08)70119-6, PII S1369702108701196
    • A. Sawa, Mater. Today 11, 28 (2008). 10.1016/S1369-7021(08)70119-6 (Pubitemid 351680723)
    • (2008) Materials Today , vol.11 , Issue.6 , pp. 28-36
    • Sawa, A.1
  • 19
    • 84883883246 scopus 로고    scopus 로고
    • Using a CAFM under high-vacuum conditions, filaments size in 2-4 nm diameter has also been reported, which means that each conducting spot could even be further composed of multiple conducting filaments in smaller sizes.
    • Using a CAFM under high-vacuum conditions, filaments size in 2-4 nm diameter has also been reported, which means that each conducting spot could even be further composed of multiple conducting filaments in smaller sizes.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.