Epitaxial graphene materials integration: Effects of dielectric overlayers on structural and electronic properties

ACS Nano

Volumn 4, Issue 5, 2010, Pages 2667-2672

  Robinson, Joshua A ^a   Labella, Michael ^a   Trumbull, Kathleen A ^a   Weng, Xiaojun ^a   Cavelero, Randall ^a   Daniels, Tad ^a   Hughes, Zachary ^a   Hollander, Mathew ^a   Fanton, Mark ^a   Snyder, David ^a,b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b The Pennsylvania State University   (United States)

Author keywords

Al 2O3; Atomic layer deposition; Epitaxial graphene; Gate oxide; Graphene; HfO2; Ta2O 5; TiO2

Indexed keywords

CONTINUOUS COVERAGE; DEPOSITION PARAMETERS; DIELECTRIC STACK; EPITAXIAL GRAPHENE; GATE OXIDE; GRAPHENE TRANSISTORS; NUCLEATION LAYERS; OVERLAYERS; THIN-FILM DIELECTRICS; TIO; TRANSISTOR PERFORMANCE;

ALUMINUM; CARRIER MOBILITY; DEPOSITION; DIELECTRIC FILMS; ELECTRONIC PROPERTIES; GATES (TRANSISTOR); GRAPHENE; HAFNIUM COMPOUNDS; TANTALUM;

GRAPHITE;

EID: 77952943376     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn1003138     Document Type: Article

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