Theoretical study on strain-induced variations in electronic properties of monolayer MoS2

Journal of Materials Science

Volumn 49, Issue 19, 2014, Pages 6762-6771

  Dong, Liang ^a   Namburu, Raju R ^b   O'Regan, Terrance P ^b   Dubey, Madan ^b   Dongare, Avinash M ^a  

^a UNIVERSITY OF CONNECTICUT   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPACTION; DATA COMPRESSION; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; MOLYBDENUM COMPOUNDS; MONOLAYERS; NANORIBBONS;

AB INITIO SIMULATIONS; COMPRESSIVE STRAIN; CONDUCTION-BAND MINIMUM; ELECTRONIC BAND GAPS; FIRST BRILLOUIN ZONE; IN-PLANE COMPRESSION; UNI-AXIAL STRETCH; VALENCE-BAND MAXIMUMS;

STRAIN;

EID: 84904726144     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-014-8370-5     Document Type: Conference Paper

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