Fabrication, characterization, and physics of III-V heterojunction tunneling field effect transistors (H-TFET) for steep sub-threshold swing

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Dewey, G ^a   Chu Kung, B ^a   Boardman, J ^a   Fastenau, J M ^b   Kavalieros, J ^a   Kotlyar, R ^a   Liu, W K ^b   Lubyshev, D ^b   Metz, M ^a   Mukherjee, N ^a   Oakey, P ^a   Pillarisetty, R ^a   Radosavljevic, M ^a   Then, H W ^a   Chau, R ^a  

^a INTEL CORPORATION   (United States)

^b IQE INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRIVE CURRENTS; ELECTRICAL OXIDE THICKNESS; HOMOJUNCTION; SOURCE DOPING; SUBTHRESHOLD SWING; THIN GATE OXIDES; TUNNEL BARRIER; TUNNELING FIELD-EFFECT TRANSISTORS;

ELECTRON DEVICES; FIELD EFFECT TRANSISTORS;

HETEROJUNCTIONS;

EID: 84863025233     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131666     Document Type: Conference Paper

References (5)

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4. D. Mohata et al., AP Express, 2, 024105, (2011)
5. M. Radosavljevic et al., IEDM Tech. Dig., pp.13.1, (2009)