Modeling of a vertical tunneling graphene heterojunction field-effect transistor

Applied Physics Letters

Volumn 101, Issue 3, 2012, Pages

  Bala Kumar, S ^a   Seol, Gyungseon ^a   Guo, Jing ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL MATERIALS; GATE INSULATOR; IV CHARACTERISTICS; N-TYPE CONDUCTION; P-TYPE; QUANTUM TRANSPORT SIMULATIONS; SCALING BEHAVIOR; SHORT-CHANNEL EFFECT; SWITCHING CHARACTERISTICS; WORK-FUNCTION DIFFERENCE;

FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; QUANTUM ELECTRONICS;

GRAPHENE;

EID: 84864264962     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4737394     Document Type: Article

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