Two-dimensional to three-dimensional tunneling in InAs/AlSb/GaSb quantum well heterojunctions

Journal of Applied Physics

Volumn 114, Issue 2, 2013, Pages

  Zeng, Yuping ^a,b   Kuo, Chien I ^a   Kapadia, Rehan ^a,b   Hsu, Ching Yi ^a   Javey, Ali ^a,b   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND TO BAND TUNNELING; CALCULATED VALUES; NEGATIVE DIFFERENTIAL RESISTANCES; RELATIVE POSITIONS; ROOM TEMPERATURE; SPATIAL CONFINEMENT; SUBBAND ENERGIES; TUNNELING DIODES;

PHYSICAL PROPERTIES; PHYSICS;

HETEROJUNCTIONS;

EID: 84880338335     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4812563     Document Type: Conference Paper

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