Use of mixed CH3-/HC(O)CH2CH2-Si(111) functionality to control interfacial chemical and electronic properties during the atomic-layer deposition of ultrathin oxides on Si(111)

Journal of Physical Chemistry Letters

Volumn 6, Issue 4, 2015, Pages 722-726

  O'Leary, Leslie E ^a   Strandwitz, Nicholas C ^a   Roske, Christopher W ^a   Pyo, Suyeon ^a   Brunschwig, Bruce S ^a   Lewis, Nathan S ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

gate oxide; interfacial oxidation; mixed monolayer; surface passivation; surface recombination velocity; two step halogenation alkylation

Indexed keywords

ALDEHYDES; ALUMINA; ALUMINUM OXIDE; ELECTRONIC PROPERTIES; MANGANESE OXIDE; METALS; MONOLAYERS; OXIDE MINERALS; PASSIVATION; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

GATE OXIDE; MIXED MONOLAYERS; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES; TWO-STEP HALOGENATION/ALKYLATION;

ATOMIC LAYER DEPOSITION;

EID: 84923354864     PISSN: None     EISSN: 19487185     Source Type: Journal    
DOI: 10.1021/jz502542a     Document Type: Article

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