Copper-metal deposition on self assembled monolayer for making top contacts in molecular electronic devices

Journal of the American Chemical Society

Volumn 131, Issue 50, 2009, Pages 18159-18167

  Seitz, Oliver ^a   Dai, Min ^b   Aguirre Tostado, F S ^a   Wallace, Robert M ^a   Chabal, Yves J ^a  

^a UNIVERSITY OF TEXAS AT DALLAS   (United States)

^b RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALKYL MONOLAYERS; COOH GROUP; CU FILMS; ELECTRICAL MEASUREMENT; ELECTRICAL PROPERTY; EX SITU; HALF CYCLE; HEAD GROUPS; HIGH DENSITY; IN-SITU; INTERFACE DEFECTS; LOW-COST DEVICES; METAL DEPOSITION; METALLIC COPPER; MOLECULAR ELECTRONIC DEVICE; ORGANIC LAYERS; SAM LAYER; SILICON SURFACES; TOP CONTACT; TWO-STEP PROCEDURE;

ACOUSTIC MICROSCOPES; ALKYLATION; ATOMIC FORCE MICROSCOPY; ATOMIC LAYER DEPOSITION; ATOMIC SPECTROSCOPY; CHEMICAL MODIFICATION; CONTACTS (FLUID MECHANICS); COPPER; DEPOSITS; ELECTRIC CONDUCTANCE; ELECTRON ENERGY LEVELS; FILM PREPARATION; FLUORINE CONTAINING POLYMERS; FUNCTIONAL GROUPS; INFRARED SPECTROSCOPY; METALS; MOLECULAR ELECTRONICS; THERMOELECTRIC EQUIPMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

SELF ASSEMBLED MONOLAYERS;

ALKYL GROUP; CARBOXYL GROUP; COPPER DERIVATIVE; COPPER DI SEC BUTYLACETAMIDINATE; SELF ASSEMBLED MONOLAYER; SILICON; UNCLASSIFIED DRUG;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMICAL MODIFICATION; CONTROLLED STUDY; COVALENT BOND; DENSITY; ELECTRIC ACTIVITY; ELECTRODE; INFRARED SPECTROSCOPY; MOLECULAR ELECTRONICS; SURFACE PROPERTY; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 72449202684     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja907003w     Document Type: Article

References (61)

1. Herwald, S. W.; Angello, S. J. Science 1960, 132, 1127-1133.
2. Moore, G. E. Electronics 1965, 38, (April 19, 1965).
3. Haick, H.; Cahen, D. Prog. Surf. Sci. 2008, 83, 217-261.
4. Akkerman, H. B.; De Boer, B. J. Phys.: Condens. Matter 2008, 20.
5. Vilan, A.; Cahen, D. Adv. Funct. Mater. 2002, 12, 795-807.
6. Moons, E.; Bruening, M.; Shanzer, A.; Beier, J.; Cahen, D. Synth. Met. 1996, 76, 245-248.
7. Shimizu, K. T.; Fabbri, J. D.; Jelincic, J. J.; Melosh, N. A. Adv. Mater. 2006, 18, 1499-1504.
8. Vilan, A.; Ghabboun, J.; Cahen, D. J. Phys. Chem. B 2003, 107, 6360-6376.
9. Vilan, A.; Shanzer, A.; Cahen, D. Nature 2000, 404, 166-168.
10. Haick, H.; Niitsoo, O.; Ghabboun, J.; Cahen, D. J. Phys. Chem. C 2007, 111, 2318-2329.
11. Lee, J. O.; Lientschnig, G.; Wiertz, F.; Struijk, M.; Janssen, R. A. J.; Egberink, R.; Reinhoudt, D. N.; Hadley, P.; Dekker, C. Nano Lett. 2003, 3, 113-117.
12. Lioubtchenko, D. V.; Markov, I. A.; Briantseva, T. A. Appl. Surf. Sci. 2003, 211, 335-340.
13. Nishizawa, M.; Sunagawa, T.; Yoneyama, H. Langmuir 1997, 13, 5215-5217.
14. Oyamatsu, D.; Nishizawa, M.; Kuwabata, S.; Yoneyama, H. Langmuir 1998, 14, 3298-3302.
15. Fisher, G. L.; Walker, A. V.; Hooper, A. E.; Tighe, T. B.; Bahnck, K. B.; Skriba, H. T.; Reinard, M. D.; Haynie, B. C.; Opila, R. L.; Winograd, N.; Allara, D. L. J. Am. Chem. Soc. 2002, 124, 5528-5541.
16. Hooper, A.; Fisher, G. L.; Konstadinidis, K.; Jung, D.; Nguyen, H.; Opila, R.; Collins, R. W.; Winograd, N.; Allara, D. L. J. Am. Chem. Soc. 1999, 121, 8052-8064.
17. Chiechi, R. C.; Weiss, E. A.; Dickey, M. D.; Whitesides, G. M. Angew. Chem., Int. Ed. 2008, 47, 142-144.
18. Holmlin, R. E.; Haag, R.; Chabinyc, M. L.; Ismagilov, R. F.; Cohen, A. E.; Terfort, A.; Rampi, M. A.; Whitesides, G. M. J. Am. Chem. Soc. 2001, 123, 5075-5085.
19. Magnussen, O. M.; Ocko, B. M.; Deutsch, M.; Regan, M. J.; Pershan, P. S.; Abernathy, D.; Grubell, G.; Legrand, J. F. Nature 1996, 384, 250-252.
20. Rampi, M. A.; Schueller, O. J. A.; Whitesides, G. M. Appl. Phys. Lett. 1998, 72, 1781-1783.
21. Rampi, M. A.; Whitesides, G. M. Chem. Phys. 2002, 281, 373-391.
22. Selzer, Y.; Salomon, A.; Cahen, D. J. Am. Chem. Soc. 2002, 124, 2886-2887.
23. Selzer, Y.; Salomon, A.; Cahen, D. J. Phys. Chem. B 2002, 106, 10432-10439.
24. Slowinski, K.; Fong, H. K. Y.; Majda, M. J. Am. Chem. Soc. 1999, 121, 7257-7261.
25. Slowinski, K.; Majda, M. J. Electroanal. Chem. 2000, 491, 139-147.
26. Li, M.; Dai, M.; Chabal, Y. J. Langmuir 2009, 25, 1911-1914.
27. Preiner, M. J.; Melosh, N. A. Langmuir 2009, 25, 2585-2587.
28. Fisher, G. L.; Hooper, A. E.; Opila, R. L.; Allara, D. L.; Winograd, N. J. Phys. Chem. B 2000, 104, 3267-3273.
29. Xu, D.; Kang, E. T.; Neoh, K. G.; Zhang, Y.; Tay, A. A. O.; Ang, S. S.; Lo, M. C. Y.; Vaidyanathan, K. J. Phys. Chem. B 2002, 106, 12508-12516.
30. Aldakov, D.; Bonnassieux, Y.; Geffroy, B.; Palacin, S. ACS Appl. Mater. Interfaces 2009, 1, 584-589.
31. Baunach, T.; Kolb, D. M. Anal. Bioanal. Chem. 2002, 373, 743-748.
32. Cavalleri, O.; Gilbert, S. E.; Kern, K. Surf. Sci. 1997, 377-379, 931-936.
33. Czanderna, A. W.; King, D. E.; Spaulding, D. J. Vac. Sci. Technol., A 1991, 9, 2607-2613.
34. Gilbert, S. E.; Cavalleri, O.; Kern, K. J. Phys. Chem. 1996, 100, 12123-12130.
35. Whelan, C. M.; Ghijsen, J.; Pireaux, J. J.; Maex, K. Thin Solid Films 2004, 464, 388-392.
36. Zangmeister, C. D.; Van Zee, R. D. Langmuir 2003, 19, 8065-8068.
37. Bao, J.-Q.; Wang, Q.; Liu, X.; Ding, L. Surf. Sci. 2008, 602, 2250-2255.
38. Liu, X.; Wang, Q.; Chen, L.-P. Appl. Surf. Sci. 2009, 255, 3789-3794.
39. Cerofolini, G. F.; Romano, E. Appl. Phys. A 2008, 91, 181-210.
40. Li, Z. W.; Rahtu, A.; Gordon, R. G. J. Electrochem. Soc. 2006, 153, C787-C794.
41. Lim, B. S.; Rahtu, A.; Gordon, R. G. Nat. Mater. 2003, 2, 749-754.
42. Boukherroub, R.; Wojtyk, J. T. C.; Wayner, D. D. M.; Lockwood, D. J. J. Electrochem. Soc. 2002, 149, H59-H63.
43. Faucheux, A.; Gouget-Laemmel, A. C.; de Villeneuve, C. H.; Boukherroub, R.; Ozanam, F.; Allongue, P.; Chazalviel, J. N. Langmuir 2006, 22, 153-162.
44. Seitz, O.; Li, M.; Dai, M.; Chabal, Y. J., paper in preparation.
45. Boukherroub, R.; Wayner, D. D. M. J. Am. Chem. Soc. 1999, 121, 11513-11515.
46. Liu, Y.-J.; Navasero, N. M.; Yu, H.-Z. Langmuir 2004, 20, 4039-4050.
47. Wallace, R. M. ECS Transactions 2008, 16, 255-271.
48. As SAMs react with the H-terminated surface, the dipole coupling between the remaining Si-H is weakened, resulting in a broadening and a red shift of the Si-H stretch modes. Consequently, the differential spectra in Figure 1b and 1c show a sharp negative component next to a broader and weaker positive absorption on the lower frequency side. The amount of H removed is ∼65% as discussed in the Supporting Information using Figure S1 in which an oxidized surface is used as reference.
49. Snyder, R. G.; Strauss, H. L.; Elliger, C. A. J. Phys. Chem. 1982, 86, 5145-5150.
50. Porter, M. D.; Bright, T. B.; Allara, D. L.; Chidsey, C. E. D. J. Am. Chem. Soc. 1987, 109, 3559-3568.
51. Aswal, D. K.; Lenfant, S.; Guerin, D.; Yakhmi, J. V.; Vuillaume, D. Anal. Chim. Acta 2006, 568, 84-108.
52. Gershevitz, O.; Sukenik, C. N. J. Am. Chem. Soc. 2004, 126, 482-483.
53. Interfacial oxide is considered in the system as a contamination since it is an unwanted species. This oxide is the standard native oxide that would grow if the surface of silicon was not protected by the SAM. The presence of an oxide reflects the imperfection of the SAM and is considered a contamination.
54. 2 formation) in less than 5 min. Therefore, a 5 min check represents a convenient and fair method to assess quality.
55. Faucheux, A.; Yang, F.; Allongue, P.; de Villeneuve, C. H.; Ozanam, F.; Chazalviel, J. N. Appl. Phys. Lett. 2006, 88, 193123-193133
56. Socrates, G. Infrared and Raman Characteristic Group Frequencies: Tables and Charts, 3rd ed.; John Wiley & Sons, LTD: Chichester, West Sussex, 2004; p 128.
57. Seitz, O.; Bocking, T.; Salomon, A.; Gooding, J. J.; Cahen, D. Langmuir 2006, 22, 6915-6922.
58. Sieval, A. B.; van den Hout, B.; Zuilhof, H.; Sudholter, E. J. R. Langmuir 2001, 17, 2172-2181.
59. Salomon, A.; Boecking, T.; Chan, C. K.; Amy, F.; Girshevitz, O.; Cahen, D.; Kahn, A. Phys. Rev. Lett. 2005, 95, 1-4.
60. Shewchun, J.; Dubow, J.; Myszkowski, A.; Singh, R. J. Appl. Phys. 1978, 49, 855-864.
61. Dai, M.; Kwon, J.; Halls, M.; Gordon, R. G.; Chabal, Y. J., submitted.