Lowering the density of electronic defects on organic-functionalized Si(100) surfaces

Applied Physics Letters

Volumn 104, Issue 24, 2014, Pages

  Peng, Weina ^a   Debenedetti, William J I ^a   Kim, Seonjae ^a   Hines, Melissa A ^b   Chabal, Yves J ^a  

^a The University of Texas at Dallas   (United States)

^b Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL SENSORS; ELECTRONIC STATES;

ATOMICALLY FLAT SURFACE; CHEMICAL PREPARATION; CHEMICAL TREATMENTS; DENSITY OF INTERFACE STATE; ELECTRONICS APPLICATIONS; FUNCTIONALIZED SURFACES; HIGH-TEMPERATURE ANNEALING; INTERFACIAL QUALITIES;

INTERFACE STATES;

EID: 84903162425     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4883367     Document Type: Article

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