Lasing in direct-bandgap GeSn alloy grown on Si

Nature Photonics

Volumn 9, Issue 2, 2015, Pages 88-92

  Wirths, S ^a   Geiger, R ^b,c   Von Den Driesch, N ^a   Mussler, G ^a   Stoica, T ^a   Mantl, S ^a   Ikonic, Z ^d   Luysberg, M ^a   Chiussi, S ^e   Hartmann, J M ^f,g   Sigg, H ^b   Faist, J ^c   Buca, D ^a   Grutzmacher D ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b PAUL SCHERRER INSTITUTE   (Switzerland)

^c ETH ZURICH   (Switzerland)

^d UNIVERSITY OF LEEDS   (United Kingdom)

^e UNIVERSITY OF VIGO   (Spain)

^f UNIV GRENOBLE ALPES   (France)

^g CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ENERGY GAP; INTEGRATION; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR LASERS;

BAND-GAP SEMICONDUCTORS; COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; HETEROGENEOUS INTEGRATION; INDIRECT BANDGAP SEMICONDUCTORS; LINEWIDTH NARROWING; LONGITUDINAL CAVITY MODES; MONOLITHIC INTEGRATION; STRONG ENHANCEMENT;

SI-GE ALLOYS;

EID: 84923115312     PISSN: 17494885     EISSN: 17494893     Source Type: Journal    
DOI: 10.1038/nphoton.2014.321     Document Type: Article

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