Electronic band structure and effective mass parameters of Ge 1-xSnx alloys

Journal of Applied Physics

Volumn 112, Issue 10, 2012, Pages

  Lu Low, Kain ^a   Yang, Yue ^a   Han, Genquan ^a   Fan, Weijun ^b   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; BOWING PARAMETERS; BRILLOUIN ZONES; CRYSTAL PLANES; EFFECTIVE MASS; ELECTRON EFFECTIVE MASS; ELECTRONIC BAND STRUCTURE; ELECTRONIC DEVICE; EMPIRICAL PSEUDOPOTENTIAL METHOD; FORM FACTORS; HIGH SYMMETRY; LUTTINGER PARAMETER; PSEUDOPOTENTIALS; QUADRATIC POLYNOMIAL;

ALLOYS; APPROXIMATION THEORY; BAND STRUCTURE; CERIUM ALLOYS; CRYSTAL ORIENTATION; GERMANIUM; TIN;

TIN ALLOYS;

EID: 84870719983     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4767381     Document Type: Article

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