Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors

Applied Physics Letters

Volumn 102, Issue 19, 2013, Pages

  Wirths, S ^a   Tiedemann, A T ^a   Ikonic, Z ^b   Harrison, P ^b   Hollander B ^a   Stoica, T ^a   Mussler, G ^a   Myronov, M ^c   Hartmann, J M ^d   Grutzmacher D ^a   Buca, D ^a   Mantl, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b UNIVERSITY OF LEEDS   (United Kingdom)

^c UNIVERSITY OF WARWICK   (United Kingdom)

^d CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; BAND ENGINEERING; CRYSTALLINE QUALITY; ELECTRONIC BAND CALCULATION; GROUP IV COMPOUNDS; HETEROSTRUCTURE DESIGNS; TUNNEL FIELD EFFECT TRANSISTOR; TUNNELING PROBABILITIES;

ENERGY GAP; FIELD EFFECT TRANSISTORS; GERMANIUM; HETEROJUNCTIONS; SILICON; TIN;

TUNNELS;

EID: 84877974747     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4805034     Document Type: Article

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