Hybrid III - V on silicon lasers for photonic integrated circuits on silicon

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 20, Issue 4, 2014, Pages

  Duan, Guang Hua ^a   Jany, Christophe ^a   Liepvre, Alban Le ^a   Accard, Alain ^a   Lamponi, Marco ^a   Make, Dalila ^a   Kaspar, Peter ^a   Levaufre, Guillaume ^a   Girard, Nils ^a   Lelarge, Francois ^b   Fedeli, Jean Marc ^b   Descos, Antoine ^b   Ben Bakir, Badhise ^b   Messaoudene, Sonia ^b   Bordel, Damien ^b   Menezo, Sylvie ^b   De Valicourt, Guilhem ^c   Keyvaninia, Shahram ^d   Roelkens, Gunter ^d   Van Thourhout, Dries ^c   Thomson, David J ^e   Gardes, Frederic Y ^e   Reed, Graham T ^e   more..

^a ALCATEL THALES III V LAB   (France)

^b CEA LETI   (France)

^c LUCENT TECHNOLOGIES   (United States)

^d GHENT UNIVERSITY   (Belgium)

^e UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

adiabatic taper; Hybrid photonic integrated circuits; semiconductor lasers; silicon laser; silicon on insulator (SOI) technology

Indexed keywords

BIT ERROR RATE; DBR LASERS; DISTRIBUTED BRAGG REFLECTORS; INTEGRATED CIRCUITS; LASER OPTICS; OPTICAL COMMUNICATION; OPTICAL RESONATORS; OPTICAL WAVEGUIDES; PHOTONIC DEVICES; PHOTONIC INTEGRATION TECHNOLOGY; RECONFIGURABLE HARDWARE; RESONATORS; SEMICONDUCTING SILICON; SEMICONDUCTOR LASERS; SILICON; SILICON WAFERS; TRANSMITTERS; WAFER BONDING; WAVEGUIDES;

ADIABATIC TAPERS; BIT ERROR RATE (BER) PERFORMANCE; HIGH EXTINCTION RATIOS; INTEGRATED TRANSMITTER; PHOTONIC INTEGRATED CIRCUITS; SIDE MODE SUPPRESSION RATIOS; SILICON LASER; WAVELENGTH TUNABILITY;

SILICON ON INSULATOR TECHNOLOGY;

EID: 84954199182     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2013.2296752     Document Type: Article

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