Excess carrier lifetimes in Ge layers on Si

Applied Physics Letters

Volumn 104, Issue 6, 2014, Pages

  Geiger, R ^a   Frigerio, J ^b   Suess M J ^a,c   Chrastina, D ^b   Isella, G ^b   Spolenak, R ^c   Faist, J ^c   Sigg, H ^a  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

^b POLITECNICO DI MILANO   (Italy)

^c ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; SEMICONDUCTING GERMANIUM;

ANNEALING PROCEDURES; BUILT-IN FIELDS; DEFECT LAYERS; DOPING PROFILES; GERMANIUM ON INSULATORS; GROWTH PARAMETERS; NON-RADIATIVE RECOMBINATION CHANNELS; PUMP-PROBE TRANSMISSION;

GERMANIUM;

EID: 84906712456     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4865237     Document Type: Article

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