Temperature effect on zinc oxysulfide-Zn(O,S) films synthesized by atomic layer deposition for Cu(In,Ga)Se2 solar cells

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 33, Issue 1, 2015, Pages

  Bugot, Cathy ^a   Schneider, Nathanaëlle ^a   Jubault, Marie ^a   Lincot, Daniel ^a   Donsanti, Frédérique ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; ATOMS; CARRIER MOBILITY; COPPER; DEPOSITION; FILM GROWTH; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SELENIUM COMPOUNDS; SOLAR CELLS; THIN FILMS; X RAY DIFFRACTION; ZINC;

ATOMIC COMPOSITIONS; DEPOSITION TEMPERATURES; EXCHANGE REACTION; GOOD CORRELATIONS; GRAZING INCIDENCE X-RAY DIFFRACTION; HALL EFFECT MEASUREMENT; HEXAGONAL WURTZITE STRUCTURE; TEMPERATURE RANGE;

ZINC SULFIDE;

EID: 84919935716     PISSN: 07342101     EISSN: 15208559     Source Type: Journal    
DOI: 10.1116/1.4903366     Document Type: Article

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