Atomic layer deposition of Zn(O,S) thin films with tunable electrical properties by oxygen annealing

Applied Physics Letters

Volumn 102, Issue 13, 2013, Pages

  Hejin Park, Helen ^a   Heasley, Rachel ^a   Gordon, Roy G ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENERGY; CRYSTALLINITIES; ORDERS OF MAGNITUDE; OXYGEN ANNEALING; POST DEPOSITION ANNEALING; ZN(O , S) THIN FILM; ZN(O ,S);

ANNEALING; ATOMIC LAYER DEPOSITION; CARRIER CONCENTRATION; DEPOSITION; ELECTRIC PROPERTIES; OXYGEN; STOICHIOMETRY;

ZINC;

EID: 84876157570     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4800928     Document Type: Article

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