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Volumn 93, Issue , 2013, Pages 72-76
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Interface formation of CuInSe2 (112) and ZnO deposited by atomic layer deposition
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Author keywords
Atomic layer deposition; Chalcopyrite; Photoemission; Solar cells
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Indexed keywords
BAND ALIGNMENTS;
CHALCOPYRITE;
INTERFACE FORMATION;
INTERFACE LAYER;
LARGE LATTICE MISMATCH;
METAL-ORGANIC MOLECULAR BEAM EPITAXY;
ZNO;
ZNO FILMS;
COPPER COMPOUNDS;
DEPOSITION;
PHOTOELECTRON SPECTROSCOPY;
PHOTOEMISSION;
SEMICONDUCTING SELENIUM COMPOUNDS;
SOLAR CELLS;
ZINC OXIDE;
ATOMIC LAYER DEPOSITION;
CHALCOPYRITE;
COPPER INDIUM DISELENIDE;
PYRITE;
SELENIDE;
UNCLASSIFIED DRUG;
ZINC OXIDE;
ARTICLE;
ATOMIC LAYER DEPOSITION TECHNIQUE;
BINDING AFFINITY;
BINDING SITE;
CHEMICAL ANALYSIS;
CHEMICAL BINDING;
CHEMICAL PROCEDURES;
COMPLEX FORMATION;
CONCENTRATION (PARAMETERS);
CONTROLLED STUDY;
DATA ANALYSIS;
FILM;
MATERIAL STATE;
MATERIALS TESTING;
PROTON NUCLEAR MAGNETIC RESONANCE;
SENSITIVITY ANALYSIS;
SPECTROSCOPY;
SURFACE PROPERTY;
TEMPERATURE SENSITIVITY;
X RAY PHOTOELECTRON SPECTROSCOPY;
X RAY PHOTOEMISSION SPECTROSCOPY;
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EID: 84885858485
PISSN: 0969806X
EISSN: 18790895
Source Type: Journal
DOI: 10.1016/j.radphyschem.2013.01.017 Document Type: Article |
Times cited : (8)
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References (13)
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