Wide-gap Cu(In,Ga)Se 2 solar cells with Zn(O,S) buffer layers prepared by atomic layer deposition

Japanese Journal of Applied Physics

Volumn 51, Issue 10 PART 2, 2012, Pages

  Nakashima, Kazuya ^a   Kumazawa, Toyokazu ^a   Kobayashi, Taizo ^a   Mise, Takahiro ^a   Nakada, Tokio ^a  

^a AOYAMA GAKUIN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBER LAYERS; BAND GAP ENERGY; BULK RECOMBINATION; CONDUCTION BAND OFFSET; CU(IN , GA)SE; INTERFACE RECOMBINATION; REFLECTION MEASUREMENTS; SOLAR CELL EFFICIENCIES; WIDE GAP; ZN(O ,S);

BUFFER LAYERS; GALLIUM; OPEN CIRCUIT VOLTAGE; SOLAR CELLS; SULFUR; ZINC;

ATOMIC LAYER DEPOSITION;

EID: 84869110381     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.10NC15     Document Type: Article

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