Characterizations of chemical bath-deposited zinc oxysulfide films and the effects of their annealing on copper-indium-gallium-selenide solar cell efficiency

Journal of Power Sources

Volumn 246, Issue , 2014, Pages 443-448

  Hsieh, Tsung Min ^a   Lue, Shingjiang Jessie ^a   Ao, Jianping ^b   Sun, Yun ^b   Feng, Wu Shiung ^a   Chang, Liann Be ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b NANKAI UNIVERSITY   (China)

Author keywords

Buffer layer; Chemical bath deposition; Copper indium gallium selenide solar cell; Zinc oxysulfide

Indexed keywords

CHEMICAL BATH DEPOSITION METHODS; CHEMICAL-BATH DEPOSITION; CRYSTALLINE STRUCTURE; LIGHT TRANSMITTANCE; RAPID THERMAL ANNEALING (RTA); SOLAR CELL EFFICIENCIES; SOLAR CELL FABRICATION; SOLAR CELL PERFORMANCE;

BUFFER LAYERS; COPPER; DEPOSITION; ELECTRIC PROPERTIES; GALLIUM; INDIUM; OXYGEN; RAPID THERMAL ANNEALING; SOLAR CELLS; SUBSTRATES;

ZINC;

EID: 84882794583     PISSN: 03787753     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpowsour.2013.07.090     Document Type: Article

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