Junction formation by Zn(O,S) sputtering yields CIGSe-based cells with efficiencies exceeding 18%

Progress in Photovoltaics: Research and Applications

Volumn 22, Issue 2, 2014, Pages 161-165

  Klenk, Reiner ^a   Steigert, Alexander ^a   Rissom, Thorsten ^a   Greiner, Dieter ^a   Kaufmann, Christian A ^a   Unold, Thomas ^a   Lux Steiner, Martha Ch ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

buffer; Cu(In,Ga)Se2; hetero junction; sputtering; thin film; Zn(O,S)

Indexed keywords

BUFFER; CU (IN ,GA)SE; JUNCTION FORMATION; LIGHT SOAKING; POST DEPOSITION ANNEALING; PRODUCTION COST; SPUTTERING YIELDS; ZN(O ,S);

GALLIUM; SOLAR CELLS; SPUTTERING; THIN FILMS; ZINC; ZINC OXIDE;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84892784096     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.2445     Document Type: Article

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