Structural and optoelectronic properties of nanostructured TiO2 thin films with annealing

Materials Science in Semiconductor Processing

Volumn 29, Issue , 2015, Pages 161-169

  Khan, Abdul Faheem ^a,b   Mehmood, Mazhar ^c   Durrani, S K ^d   Ali, M L ^e   Rahim, N A ^a  

^a UNIVERSITY OF MALAYA   (Malaysia)

^b INSTITUTE OF SPACE TECHNOLOGY   (Pakistan)

^c PAKISTAN INSTITUTE OF ENGINEERING AND APPLIED SCIENCES   (Pakistan)

^d PAKISTAN INSTITUTE OF NUCLEAR SCIENCE AND TECHNOLOGY   (Pakistan)

^e Quaid e Awam University of Engineering Science and Technology Nawabshah   (Pakistan)

Author keywords

Band gap; Raman spectroscopy; Thin film; TiO2; XRD

Indexed keywords

ANNEALING; BLUE SHIFT; CRYSTALLINITY; ENERGY GAP; OPTICAL DATA PROCESSING; OXIDE FILMS; OXIDE MINERALS; RAMAN SPECTROSCOPY; REFRACTIVE INDEX; TITANIUM DIOXIDE; X RAY DIFFRACTION;

ANNEALING TEMPERATURES; ELECTRICAL AND STRUCTURAL PROPERTIES; ELECTRON BEAM EVAPORATION; ELEVATED TEMPERATURE; OPTICAL BAND GAP ENERGY; OPTOELECTRONIC PROPERTIES; QUANTUM CONFINEMENT EFFECTS; TIO2;

THIN FILMS;

EID: 84915753641     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2014.02.009     Document Type: Article

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