Effect of annealing on electrical resistivity of rf-magnetron sputtered nanostructured SnO 2 thin films

Applied Surface Science

Volumn 255, Issue 20, 2009, Pages 8562-8565

  Khan, Abdul Faheem ^a   Mehmood, M ^a   Rana, A M ^b   Bhatti, M T ^b  

^a PAKISTAN INSTITUTE OF ENGINEERING AND APPLIED SCIENCES   (Pakistan)

^b BAHAUDDIN ZAKARIYA UNIVERSITY   (Pakistan)

Author keywords

Atomic force microscopy (AFM); Electrical resistivity; Nanostructured SnO 2; rf magnetron sputtering; SnO; Thin films

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTIVITY; MAGNETRON SPUTTERING; OXIDE FILMS; PARTICLE SIZE; SUBSTRATES; TIN OXIDES; X RAY DIFFRACTION;

ANNEALING TEMPERATURES; AVERAGE PARTICLE SIZE; EFFECT OF ANNEALING; NANO-STRUCTURED; NANOSTRUCTURED SNO2 THIN FILMS; RADIO FREQUENCY MAGNETRON SPUTTERING; RF-MAGNETRON SPUTTERING; STRUCTURAL AND ELECTRICAL PROPERTIES;

THIN FILMS;

EID: 67650489073     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.06.020     Document Type: Article

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