Effect of annealing on structural, optical and electrical properties of nanostructured Ge thin films

Applied Surface Science

Volumn 256, Issue 7, 2010, Pages 2031-2037

  Khan, Abdul Faheem ^a   Mehmood, Mazhar ^a   Rana, Anwar M ^b   Muhammad, Taj ^c  

^a PAKISTAN INSTITUTE OF ENGINEERING AND APPLIED SCIENCES   (Pakistan)

^b BAHAUDDIN ZAKARIYA UNIVERSITY   (Pakistan)

^c NILOP   (Pakistan)

Author keywords

Band gap energy; Electrical resistivity; Germanium oxide; Nanostructured Ge; Quantum confinement; Raman spectroscopy

Indexed keywords

AMORPHOUS FILMS; ANNEALING; ELECTRIC CONDUCTIVITY; ENERGY GAP; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GERMANIUM OXIDES; NANOSTRUCTURES; OPTICAL BAND GAPS; OXIDATION; QUANTUM CONFINEMENT; RAMAN SPECTROSCOPY; X RAY DIFFRACTION;

ANNEALING TEMPERATURES; BAND GAP ENERGY; ELECTRICAL AND STRUCTURAL PROPERTIES; ELECTRON BEAM EVAPORATION; NANO-STRUCTURED; OPTICAL AND ELECTRICAL PROPERTIES; OPTICAL BAND GAP ENERGY; QUANTUM CONFINEMENT EFFECTS;

THIN FILMS;

EID: 74149086037     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.09.043     Document Type: Article

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