Bipolar electric-field enhanced trapping and detrapping of mobile donors in BiFeO3 memristors

ACS Applied Materials and Interfaces

Volumn 6, Issue 22, 2014, Pages 19758-19765

  You, Tiangui ^a   Du, Nan ^a   Slesazeck, Stefan ^b   Mikolajick, Thomas ^b,c   Li, Guodong ^d   Bürger, Danilo ^a   Skorupa, Ilona ^e   Stöcker, Hartmut ^f   Abendroth, Barbara ^f   Beyer, Andreas ^g   Volz, Kerstin ^g   Schmidt, Oliver G ^a,d   Schmidt, Heidemarie ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b NAMLAB GGMBH   (Germany)

^c DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^d IFW DRESDEN   (Germany)

^e INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^f TU BERGAKADEMIE FREIBERG   (Germany)

^g PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

BiFeO3 thin films; Bipolar resistive switching; Mobile oxygen vacancy; Modifiable rectification properties; Reliability; Ti diffusion

Indexed keywords

ATOMIC FORCE MICROSCOPY; BISMUTH COMPOUNDS; ELECTRIC FIELDS; GOLD DEPOSITS; IRON COMPOUNDS; MEMRISTORS; OXYGEN VACANCIES; PULSED LASER DEPOSITION; RELIABILITY; SCHOTTKY BARRIER DIODES; SWITCHING;

BIFEO3 THIN FILM; CONDUCTIVE ATOMIC FORCE MICROSCOPY; LARGE AMPLITUDE; RECTIFICATION PROPERTIES; RESISTIVE SWITCHING; SCHOTTKY BARRIER HEIGHTS; SWITCHING SPEED; TI DIFFUSION;

ELECTRIC RECTIFIERS;

EID: 84914706510     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am504871g     Document Type: Article

References (47)

1. Vogel, E. Technology and Metrology of New Electronic Materials and Devices. Nat. Nanotechnol. 2007, 2, 25-32.
2. Xia, Q.; Robinett, W.; Cumbie, M. W.; Banerjee, N.; Cardinali, T. J.; Yang, J. J.; Wu, W.; Li, X.; Tong, W. M.; Strukov, D. B. Memristor-CMOS Hybrid Integrated Circuits for Reconfigurable Logic. Nano Lett. 2009, 9, 3640-3645.
3. Waser, R.; Aono, M. Nanoionics-based Resistive Switching Memories. Nat. Mater. 2007, 6, 833-840.
4. 2-x Bilayer Structures. Nat. Mater. 2011, 10, 625-630.
5. Borghetti, J.; Snider, G. S.; Kuekes, P. J.; Yang, J. J.; Stewart, D. R.; Williams, R. S. 'Memristive' Switches Enable 'Stateful' Logic Operations via Material Implication. Nature 2010, 464, 873-876.
6. Linn, E.; Rosezin, R.; Tappertzhofen, S.; Böttger, U.; Waser, R. Beyond von Neumann-Logic Operations in Passive Crossbar Arrays Alongside Memory Operations. Nanotechnology 2012, 23, 305205.
7. Jo, S. H.; Chang, T.; Ebong, I.; Bhadviya, B. B.; Mazumder, P.; Lu, W. Nanoscale Memristor Device as Synapse in Neuromorphic Systems. Nano Lett. 2010, 10, 1297-1301.
8. 3 Bilayer Structures for Compact Sequential Logics. Adv. Funct. Mater. 2014, 24, 3357-3365.
9. Du, N.; Manjunath, N.; Shuai, Y.; Bürger, D.; Skorupa, I.; Schüffny, R.; Mayr, C.; Basov, D. N.; Di Ventra, M.; Schmidt, O. G.; Schmidt, H. Novel Implementation of Memristive Systems for Data Encryption and Obfuscation. J. Appl. Phys. 2014, 115, 124501.
10. Chae, S. C.; Lee, J. S.; Kim, S.; Lee, S. B.; Chang, S. H.; Liu, C.; Kahng, B.; Shin, H.; Kim, D. W.; Jung, C. U. Random Circuit Breaker Network Model for Unipolar Resistance Switching. Adv. Mater. 2008, 20, 1154-1159.
11. 2 Resistive Switching Memory. Nat. Nanotechnol. 2010, 5, 148-153.
12. 3 Thin-Film Capacitors. Adv. Mater. 2011, 23, 1277-1281.
13. 3 Resistive Switching Memories. Small 2012, 8, 1279-1284.
14. Kim, T. W.; Zeigler, D. F.; Acton, O.; Yip, H. L.; Ma, H.; Jen, A. K. Y. All-Organic Photopatterned One Diode-One Resistor Cell Array for Advanced Organic Nonvolatile Memory Applications. Adv. Mater. 2012, 24, 828-833.
15. Yang, J. J.; Borghetti, J.; Murphy, D.; Stewart, D. R.; Williams, R. S. A Family of Electronically Reconfigurable Nanodevices. Adv. Mater. 2009, 21, 3754-3758.
16. 3 Based Thin Films. Nanotechnology 2013, 24, 275201.
17. Rozenberg, M.; Inoue, I.; Sanchez, M. Nonvolatile Memory with Multilevel Switching: A Basic Model. Phys. Rev. Lett. 2004, 92, 178302.
18. 3. Science 2009, 324, 63-66.
19. 3 Thin Films. ACS Appl. Mater. Interfaces 2014, 6, 6346-6350.
20. 3 Nano-Island Based Switchable Diodes. Adv. Mater. 2013, 25, 2339-2343.
21. Rana, A.; Lu, H.; Bogle, K.; Zhang, Q.; Vasudevan, R.; Thakare, V.; Gruverman, A.; Ogale, S.; Valanoor, N. Scaling Behavior of Resistive Switching in Epitaxial Bismuth Ferrite Heterostructures. Adv. Funct. Mater. 2014, 24, 3962-3969.
22. 3 Interfaces. Adv. Funct. Mater. 2012, 22, 1040-1047.
23. 3 Thin Films. Appl. Phys. Lett. 2010, 97, 042101.
24. 3 Thin Films. Appl. Phys. Lett. 2012, 100, 133505.
25. 3 Films. J. Appl. Phys. 2014, 115, 17D716.
26. Yang, J. J.; Pickett, M. D.; Li, X.; Ohlberg, D. A.; Stewart, D. R.; Williams, R. S. Memristive Switching Mechanism for Metal/Oxide/Metal Nanodevices. Nat. Nanotechnol. 2008, 3, 429-433.
27. Sawa, A. Resistive Switching in Transition Metal Oxides. Mater. Today 2008, 11, 28-36.
28. Yang, Y.; Lu, W. Nanoscale Resistive Switching Devices: Mechanisms and Modeling. Nanoscale 2013, 5, 10076-10092.
29. Schroeder, H.; Zhirnov, V. V.; Cavin, R. K.; Waser, R. Voltage-Time Dilemma of Pure Electronic Mechanisms in Resistive Switching Memory cells. J. Appl. Phys. 2010, 107, 054517.
30. 4 Thin Films. Adv. Mater. 2010, 22, 411-414.
31. Ge, C.; Jin, K.-J.; Wang, C.; Lu, H.-B.; Wang, C.; Yang, G.-Z. Numerical Investigation into the Switchable Diode Effect in Metal-Ferroelectric-Metal Structures. Appl. Phys. Lett. 2011, 99, 063509.
32. Sreenivas, K.; Reaney, I.; Maeder, T.; Setter, N.; Jagadish, C.; Elliman, R. Investigation of Pt/Ti Bilayer Metallization on Silicon for Ferroelectric Thin Film Integration. J. Appl. Phys. 1994, 75, 232-239.
33. 2 Electrodes. Microelectron. Eng. 1995, 29, 177-180.
34. 3. Appl. Phys. Lett. 2011, 98, 091909.
35. Kimmel, A. V.; Weaver, P. M.; Cain, M. G.; Sushko, P. V. Defect-Mediated Lattice Relaxation and Domain Stability in Ferroelectric Oxides. Phys. Rev. Lett. 2012, 109, 117601.
36. Yang, Q.; Cao, J. X.; Ma, Y.; Zhou, Y. C.; Jiang, L. M.; Zhong, X. L. Strain Effects on Formation and Migration Energies of Oxygen Vacancy in Perovskite Ferroelectrics: A First-Principles Study. J. Appl. Phys. 2013, 113, 184110.
37. 2 Thin Films by Inserting Ru Nanodots. Adv. Mater. 2013, 25, 1987-1992.
38. Wang, Z.; Xu, H.; Zhang, L.; Li, X.; Ma, J.; Zhang, X.; Liu, Y. Performance Improvement of Resistive Switching Memory Achieved by Enhancing Local-Electric-Field Near Electromigrated Ag-nanoclusters. Nanoscale 2013, 5, 4490-4494.
39. 3: Vacancy Drift and Oxidation-Reduction of Transition Metals. Phys. Rev. B 1971, 4, 3548.
40. 3 Thin Films. J. Appl. Phys. 2006, 99, 094107.
41. Waser, R. Bulk Conductivity and Defect Chemistry of Acceptor-Doped Strontium Titanate in the Quenched State. J. Am. Ceram. Soc. 1991, 74, 1934-1940.
42. Strukov, D. B.; Williams, R. S. Exponential Ionic Drift: Fast Switching and Low Volatility of Thin-Film Memristors. Appl. Phys. A Mater.Sci. Process. 2009, 94, 515-519.
43. Simmons, J. Richardson-Schottky Effect in Solids. Phys. Rev. Lett. 1965, 15, 967.
44. Dimoulas, A.; Tsipas, P.; Sotiropoulos, A.; Evangelou, E. Fermi-Level Pinning and Charge Neutrality Level in Germanium. Appl. Phys. Lett. 2006, 89, 252110.
45. 3 Thin Films with Downscaled Electrodes. Phys. Status. Solidi A 2014, DOI: 10.1002/pssa.201431298.
46. 3 Thin Films with Enhanced Nanoscale Shunts. ACS Appl. Mater. Interfaces 2013, 5, 12764-12771.
47. Bersuker, G.; Gilmer, D. C.; Veksler, D.; Kirsch, P.; Vandelli, L.; Padovani, A.; Larcher, L.; McKenna, K.; Shluger, A.; Iglesias, V.; Porti, M.; Naffria, M. Metal Oxide Resistive Memory Switching Mechanism Based on Conductive Filament Properties. J. Appl. Phys. 2011, 110, 124518.