SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 99, Issue 6, 2011, Pages

Numerical investigation into the switchable diode effect in metal-ferroelectric-metal structures

(6) Ge, Chen a Jin, Kui Juan a Wang, Can a Lu, Hui Bin a Wang, Cong a Yang, Guo Zhen a

a INSTITUTE OF PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; DIODE EFFECTS; EXPERIMENTAL DATA; LINEAR RELATIONSHIPS; METAL ELECTRODES; NUMERICAL INVESTIGATIONS; NUMERICAL MODELS; POLARIZATION-MODULATED; SCREENING EFFECT; SWITCHABLE;

CARRIER CONCENTRATION; DIODES; ELECTRODES; POLARIZATION; PRECIOUS METALS;

METALS;

EID: 80155181874 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3624849 Document Type: Article

Times cited : (54)

References (19)

1
- 64249168806
- 10.1126/science.1168636
- T. Choi, Science 324, 63 (2009). 10.1126/science.1168636
- (2009) Science , vol.324 , pp. 63
- Choi, T.¹

2
- 79952403920
- 10.1002/adma.201004317
- A. Q. Jiang, Adv. Mater. 23, 1277 (2011). 10.1002/adma.201004317
- (2011) Adv. Mater. , vol.23 , pp. 1277
- Jiang, A.Q.¹

3
- 79959678468
- 10.1063/1.3589814
- C. Wang, Appl. Phys. Lett. 98, 192901 (2011). 10.1063/1.3589814
- (2011) Appl. Phys. Lett. , vol.98 , pp. 192901
- Wang, C.¹

4
- 79955713334
- 10.1063/1.3569619
- C. J. Won, J. Appl. Phys. 109, 084108 (2011). 10.1063/1.3569619
- (2011) J. Appl. Phys. , vol.109 , pp. 084108
- Won, C.J.¹

5
- 0015656842
- 10.1063/1.1662770
- B. B. Mehta, J. Appl. Phys. 44, 3379 (1973) 10.1063/1.1662770
- (1973) J. Appl. Phys. , vol.44 , pp. 3379
- Mehta, B.B.¹

6
- 0032623974
- 10.1109/16.753713
- C. T. Black and J. J. Welser, IEEE Trans. Electron Devices 46, 776 (1999). 10.1109/16.753713
- (1999) IEEE Trans. Electron Devices , vol.46 , pp. 776
- Black, C.T.¹ Welser, J.J.²

7
- 0003470014
- (Thomson Learning, Florence)
- N. W. Ashcroft and N. D. Mermin, Solid State Physics (Thomson Learning, Florence, 1976).
- (1976) Solid State Physics
- Ashcroft, N.W.¹ Mermin, N.D.²

8
- 33750532352
- Self-consistent theory of unipolar charge-carrier injection in metalinsulatormetal systems
- DOI 10.1063/1.2360383
- F. Neumann, J. Appl. Phys. 100, 084511 (2006) 10.1063/1.2360383 (Pubitemid 44664818)
- (2006) Journal of Applied Physics , vol.100 , Issue.8 , pp. 084511
- Neumann, F.¹ Genenko, Y.A.² Melzer, C.³ Von Seggern, H.⁴

9
- 34347324008
- F. Neumann, Phys. Rev. B 75, 205322 (2007).
- (2007) Phys. Rev. B , vol.75 , pp. 205322
- Neumann, F.¹

10
- 0003649561
- (Springer, Berlin)
- D. Schrder, Modelling of Interface Carrier Transport for Device Simulation (Springer, Berlin, 1994).
- (1994) Modelling of Interface Carrier Transport for Device Simulation
- Schrder, D.¹

11
- 40549093643
- 3 thin films
- DOI 10.1063/1.2887908
- S. R. Basu, Appl. Phys. Lett. 92, 091905 (2008). 10.1063/1.2887908 (Pubitemid 351357368)
- (2008) Applied Physics Letters , vol.92 , Issue.9 , pp. 091905
- Basu, S.R.¹ Martin, L.W.² Chu, Y.H.³ Gajek, M.⁴ Ramesh, R.⁵ Rai, R.C.⁶ Xu, X.⁷ Musfeldt, J.L.⁸

12
- 78049434352
- 10.1103/PhysRevB.82.134513
- M. van Zalk, Phys. Rev. B 82, 134513 (2010). 10.1103/PhysRevB.82.134513
- (2010) Phys. Rev. B , vol.82 , pp. 134513
- Van Zalk, M.¹

13
- 34047113334
- 3 determined by in situ photoemission spectroscopy
- DOI 10.1063/1.2717517
- M. Minohara, Appl. Phys. Lett. 90, 132123 (2007). 10.1063/1.2717517 (Pubitemid 46516878)
- (2007) Applied Physics Letters , vol.90 , Issue.13 , pp. 132123
- Minohara, M.¹ Ohkubo, I.² Kumigashira, H.³ Oshima, M.⁴

14
- 20844431872
- 3 thin films
- DOI 10.1063/1.1931063, 202908
- R. Plonka, Appl. Phys. Lett. 86, 202908 (2005). 10.1063/1.1931063 (Pubitemid 40861036)
- (2005) Applied Physics Letters , vol.86 , Issue.20 , pp. 1-3
- Plonka, R.¹ Dittmann, R.² Pertsev, N.A.³ Vasco, E.⁴ Waser, R.⁵

15
- 40849113431
- 3 heterojunction
- DOI 10.1063/1.2896302
- H. Yang, Appl. Phys. Lett. 92, 102113 (2008). 10.1063/1.2896302 (Pubitemid 351393940)
- (2008) Applied Physics Letters , vol.92 , Issue.10 , pp. 102113
- Yang, H.¹ Luo, H.M.² Wang, H.³ Usov, I.O.⁴ Suvorova, N.A.⁵ Jain, M.⁶ Feldmann, D.M.⁷ Dowden, P.C.⁸ DePaula, R.F.⁹ Jia, Q.X.¹⁰

16
- 0042991275
- Ballistic carbon nanotube field-effect transistors
- DOI 10.1038/nature01797
- A. Javey, Nature 424, 654 (2003). 10.1038/nature01797 (Pubitemid 36987985)
- (2003) Nature , vol.424 , Issue.6949 , pp. 654-657
- Javey, A.¹ Guo, J.² Wang, Q.³ Lundstrom, M.⁴ Dai, H.⁵

17
- 42049122380
- 10.1103/PhysRevB.77.165114
- G. Herranz, Phys. Rev. B 77, 165114 (2008). 10.1103/PhysRevB.77.165114
- (2008) Phys. Rev. B , vol.77 , pp. 165114
- Herranz, G.¹

18
- 28844464275
- Polarization relaxation induced by a depolarization field in ultrathin ferroelectric BaTiO3 capacitors
- DOI 10.1103/PhysRevLett.95.237602, 237602
- D. J. Kim, Phys. Rev. Lett. 95, 237602 (2005). 10.1103/PhysRevLett.95. 237602 (Pubitemid 41776942)
- (2005) Physical Review Letters , vol.95 , Issue.23 , pp. 1-4
- Kim, D.J.¹ Jo, J.Y.² Kim, Y.S.³ Chang, Y.J.⁴ Lee, J.S.⁵ Yoon, J.-G.⁶ Song, T.K.⁷ Noh, T.W.⁸

19
- 67349117817
- 10.1038/nmat2432
- C. H. Yang, Nat. Mater. 8, 485 (2009). 10.1038/nmat2432
- (2009) Nat. Mater. , vol.8 , pp. 485
- Yang, C.H.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.