SCOPUS 정보 검색 플랫폼

Volumn 5, Issue 10, 2013, Pages 4490-4494

Performance improvement of resistive switching memory achieved by enhancing local-electric-field near electromigrated Ag-nanoclusters

(7) Wang, Z Q a Xu, H Y a Zhang, L a Li, X H a Ma, J G a Zhang, X T a Liu, Y C a

a NORTHEAST NORMAL UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; NANOCLUSTERS; OXYGEN; OXYGEN VACANCIES; ZINC OXIDE;

CONDUCTING FILAMENT; DEVICE PERFORMANCE; PERFORMANCE IMPROVEMENTS; RECOMBINATION RATE; RESISTIVE SWITCHING MEMORY; SIMPLE STRUCTURES; SURFACE CURVATURES; SWITCHING PARAMETERS;

SWITCHING;

EID: 84877769253 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c3nr33692a Document Type: Article

Times cited : (109)

References (22)

1
- 33745013331
- D. C. Kim M. J. Lee S. E. Ahn S. Seo J. C. Park I. K. Yoo I. G. Baek H. J. Kim E. K. Yim J. E. Lee S. O. Park H. S. Kim U. Chung J. T. Moon B. I. Ryu Appl. Phys. Lett. 2006 88 232106
- (2006) Appl. Phys. Lett. , vol.88 , pp. 232106
- Kim, D.C.¹ Lee, M.J.² Ahn, S.E.³ Seo, S.⁴ Park, J.C.⁵ Yoo, I.K.⁶ Baek, I.G.⁷ Kim, H.J.⁸ Yim, E.K.⁹ Lee, J.E.¹⁰ Park, S.O.¹¹ Kim, H.S.¹² Chung, U.¹³ Moon, J.T.¹⁴ Ryu, B.I.¹⁵

2
- 79551646052
- H. W. Zhang L. Liu B. Gao Y. Qiu X. Liu J. Lu R. Han J. F. Kang B. Yu Appl. Phys. Lett. 2011 98 042105
- (2011) Appl. Phys. Lett. , vol.98 , pp. 042105
- Zhang, H.W.¹ Liu, L.² Gao, B.³ Qiu, Y.⁴ Liu, X.⁵ Lu, J.⁶ Han, R.⁷ Kang, J.F.⁸ Yu, B.⁹

3
- 84859939803
- D. Panda C. Y. Huang T. Y. Tseng Appl. Phys. Lett. 2012 100 112901
- (2012) Appl. Phys. Lett. , vol.100 , pp. 112901
- Panda, D.¹ Huang, C.Y.² Tseng, T.Y.³

4
- 78249286494
- Z. Q. Wang X. H. Li H. Y. Xu W. Wang H. Yu X. T. Zhang Y. X. Liu Y. C. Liu J. Phys. D: Appl. Phys. 2010 43 385105
- (2010) J. Phys. D: Appl. Phys. , vol.43 , pp. 385105
- Wang, Z.Q.¹ Li, X.H.² Xu, H.Y.³ Wang, W.⁴ Yu, H.⁵ Zhang, X.T.⁶ Liu, Y.X.⁷ Liu, Y.C.⁸

5
- 80053563016
- Z. Q. Wang H. Y. Xu X. H. Li X. T. Zhang Y. X. Liu Y. C. Liu IEEE Electron Device Lett. 2011 32 1442
- (2011) IEEE Electron Device Lett. , vol.32 , pp. 1442
- Wang, Z.Q.¹ Xu, H.Y.² Li, X.H.³ Zhang, X.T.⁴ Liu, Y.X.⁵ Liu, Y.C.⁶

6
- 67349267736
- S. Kim H. Moon D. Gupta S. Yoo Y. Choi IEEE Trans. Electron Devices 2009 56 4 696
- (2009) IEEE Trans. Electron Devices , vol.56 , Issue.4 , pp. 696
- Kim, S.¹ Moon, H.² Gupta, D.³ Yoo, S.⁴ Choi, Y.⁵

7
- 77954321120
- M. Chen T. C. Chang C. T. Tsai S. Y. Huang S. C. Chen C. Hu S. M. Sze M. J. Tsai Appl. Phys. Lett. 2010 96 262110
- (2010) Appl. Phys. Lett. , vol.96 , pp. 262110
- Chen, M.¹ Chang, T.C.² Tsai, C.T.³ Huang, S.Y.⁴ Chen, S.C.⁵ Hu, C.⁶ Sze, S.M.⁷ Tsai, M.J.⁸

8
- 59849099356
- U. Russo D. Ielmini C. Cagli A. L. Lacaita IEEE Trans. Electron Devices 2009 56 2 186
- (2009) IEEE Trans. Electron Devices , vol.56 , Issue.2 , pp. 186
- Russo, U.¹ Ielmini, D.² Cagli, C.³ Lacaita, A.L.⁴

9
- 84863015302
- Y. S. Chen J. F. Kang B. Chen B. Gao L. F. Liu X. Y. Liu Y. Y. Wang L. Wu H. Y. Yu J. Y. Wang Q. Chen E. G. Wang J. Phys. D: Appl. Phys. 2012 45 065303
- (2012) J. Phys. D: Appl. Phys. , vol.45 , pp. 065303
- Chen, Y.S.¹ Kang, J.F.² Chen, B.³ Gao, B.⁴ Liu, L.F.⁵ Liu, X.Y.⁶ Wang, Y.Y.⁷ Wu, L.⁸ Yu, H.Y.⁹ Wang, J.Y.¹⁰ Chen, Q.¹¹ Wang, E.G.¹²

10
- 77954144619
- M. J. Lee C. B. Lee D. Lee S. R. Lee J. Hur S. Ahn M. Chang Y. Kim U. Chung C.-J. Kim D. Kim H. Lee IEEE Electron Device Lett. 2010 31 7 725
- (2010) IEEE Electron Device Lett. , vol.31 , Issue.7 , pp. 725
- Lee, M.J.¹ Lee, C.B.² Lee, D.³ Lee, S.R.⁴ Hur, J.⁵ Ahn, S.⁶ Chang, M.⁷ Kim, Y.⁸ Chung, U.⁹ Kim, C.-J.¹⁰ Kim, D.¹¹ Lee, H.¹²

11
- 65449189591
- S. B. Lee S. C. Chae S. H. Chang T. W. Noh Appl. Phys. Lett. 2009 94 173504
- (2009) Appl. Phys. Lett. , vol.94 , pp. 173504
- Lee, S.B.¹ Chae, S.C.² Chang, S.H.³ Noh, T.W.⁴

12
- 78049295581
- Q. Liu S. Long W. Wang S. Tanachutiwat Y. Li Q. Wang M. Zhang Z. Huo J. Chen M. Liu IEEE Electron Device Lett. 2010 31 1299
- (2010) IEEE Electron Device Lett. , vol.31 , pp. 1299
- Liu, Q.¹ Long, S.² Wang, W.³ Tanachutiwat, S.⁴ Li, Y.⁵ Wang, Q.⁶ Zhang, M.⁷ Huo, Z.⁸ Chen, J.⁹ Liu, M.¹⁰

13
- 78049340534
- Q. Liu S. Long H. Lv W. Wang J. Niu Z. Huo J. Chen M. Liu ACS Nano 2010 4 6162
- (2010) ACS Nano , vol.4 , pp. 6162
- Liu, Q.¹ Long, S.² Lv, H.³ Wang, W.⁴ Niu, J.⁵ Huo, Z.⁶ Chen, J.⁷ Liu, M.⁸

14
- 57049104587
- S. B. Lee S. C. Chae S. H. Chang J. S. Lee S. Seo Appl. Phys. Lett. 2008 93 212105
- (2008) Appl. Phys. Lett. , vol.93 , pp. 212105
- Lee, S.B.¹ Chae, S.C.² Chang, S.H.³ Lee, J.S.⁴ Seo, S.⁵

15
- 70549106464
- B. Gao B. Sun H. W. Zhang L. Liu X. Liu R. Han J. F. Kang B. Yu IEEE Electron Device Lett. 2009 30 1326
- (2009) IEEE Electron Device Lett. , vol.30 , pp. 1326
- Gao, B.¹ Sun, B.² Zhang, H.W.³ Liu, L.⁴ Liu, X.⁵ Han, R.⁶ Kang, J.F.⁷ Yu, B.⁸

16
- 84859206837
- Y. C. Yang P. Gao S. Gaba T. Chang X. Pan W. Lu Nat. Commun. 2012 3 732
- (2012) Nat. Commun. , vol.3 , pp. 732
- Yang, Y.C.¹ Gao, P.² Gaba, S.³ Chang, T.⁴ Pan, X.⁵ Lu, W.⁶

17
- 65249125383
- Y. C. Yang F. Pan Q. Liu M. Liu F. Zeng Nano Lett. 2009 9 4 1636
- (2009) Nano Lett. , vol.9 , Issue.4 , pp. 1636
- Yang, Y.C.¹ Pan, F.² Liu, Q.³ Liu, M.⁴ Zeng, F.⁵

18
- 84855463299
- T. Hasegawa K. Terabe T. Tsuruoka M. Aono Adv. Mater. 2012 24 252
- (2012) Adv. Mater. , vol.24 , pp. 252
- Hasegawa, T.¹ Terabe, K.² Tsuruoka, T.³ Aono, M.⁴

19
- 33746298191
- A. Bid A. Bora A. K. Raychaudhuri Phys. Rev. B: Condens. Matter Mater. Phys. 2006 74 035426
- (2006) Phys. Rev. B: Condens. Matter Mater. Phys. , vol.74 , pp. 035426
- Bid, A.¹ Bora, A.² Raychaudhuri, A.K.³

20
- 0002081496
- K. Vanheusden W. L. Warren C. H. Seager D. R. Tallant J. A. Voigt B. E. Gnade J. Appl. Phys. 1996 79 10 7983
- (1996) J. Appl. Phys. , vol.79 , Issue.10 , pp. 7983
- Vanheusden, K.¹ Warren, W.L.² Seager, C.H.³ Tallant, D.R.⁴ Voigt, J.A.⁵ Gnade, B.E.⁶

21
- 84863236872
- J. Qi M. Olmedo J. Ren N. Zhan J. Zhao J. Zheng J. Liu ACS Nano 2012 6 1051
- (2012) ACS Nano , vol.6 , pp. 1051
- Qi, J.¹ Olmedo, M.² Ren, J.³ Zhan, N.⁴ Zhao, J.⁵ Zheng, J.⁶ Liu, J.⁷

22
- 82555171565
- S. Menzel M. Waters A. Marchewka U. Böttger R. Dittmann R. Waser Adv. Funct. Mater. 2011 21 4487
- (2011) Adv. Funct. Mater. , vol.21 , pp. 4487
- Menzel, S.¹ Waters, M.² Marchewka, A.³ Böttger, U.⁴ Dittmann, R.⁵ Waser, R.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.