Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Pelaz, L ^a   Duffy, R ^b   Aboy, M ^a   Marques, L ^a   Lopez, P ^a   Santos, I ^a   Pawlak, B J ^b   Van Dal, M J H ^b   Duriez, B ^b   Merelle, T ^b   Doornbos, G ^b   Collaert, N ^c   Witters, L ^c   Rooyackers, R ^c   Vandervorst, W ^c   Jurczak, M ^c   Kaiser, M ^d   Weemaes, R G R ^d   Van Berkum, J G M ^d   Breimer, P ^d   Lander, R J P ^b   more..

^a UNIVERSITY OF VALLADOLID   (Spain)

^b NXP TSMC Research Center   (Belgium)

^c IMEC   (Belgium)

^d PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC MODELING; ATOMISTIC SIMULATIONS; CRYSTALLINE SI; DIFFUSION LENGTHS; ELECTRICAL ANALYSIS; KINETIC MONTE CARLO SIMULATIONS; LOW ENERGIES; POLY-CRYSTALLINE; RANGE DEFECTS; RECRYSTALLIZATION; THIN BODIES; TILT ANGLES; TWIN BOUNDARIES; ULTRA-THIN BODIES; ULTRA-THIN-BODY SI;

CRYSTALLINE MATERIALS; DISSOLUTION; DYNAMICS; ELECTRON DEVICES; ION BOMBARDMENT; ION IMPLANTATION; MOLECULAR DYNAMICS; MONTE CARLO METHODS; MOSFET DEVICES; SURFACE DEFECTS; SURFACE DIFFUSION;

SILICON;

EID: 64549142753     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796744     Document Type: Conference Paper

References (9)

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4. R. Duffy et al., "Solid phase epitaxy versus random nucleation and growth in sub-20 nm wide fin field-effect transistors", Appl. Phys. Lett., vol. 90, 241912, 2007.
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6. K. Saenger et al., "Effect of Elevated Implant Temperature on Amorphization and Activation in As-implanted Silicon-on-insulator Layers" Mat. Res. Soc. Spring Meeting Symp. E Proc., 1070-E05-02, 2008.
7. L. Pelaz, L.A. Marqués and J. Barbolla, "Ion-beam-induced amorphization and recrystallization in silicon", J. Appl. Phys., vol. 96, pp. 5947-5976, 2004.
8. L. Pelaz, unpublished.
9. V. C. Venezia et al., "Radiation-enhanced diffusion of Sb and B in silicon during implantation below 400 °C",Phys. Rev. B, vol. 69, 125215, 2004.