The physics and backward diode behavior of heavily doped single layer MoS2 based p-n junctions

Applied Physics Letters

Volumn 102, Issue 9, 2013, Pages

  Sun, Qing Qing ^a   Li, Yong Jun ^a   He, Jin Lan ^a   Yang, Wen ^a   Zhou, Peng ^a   Lu, Hong Liang ^a   Ding, Shi Jing ^a   Wei Zhang, David ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BACKWARD DIODES; HEAVILY DOPED; HEAVY DOPING; LOW POWER; N-TYPE AND P-TYPE DOPING; P-N JUNCTION; SINGLE LAYER;

CHLORINE; GRAPHENE; PHOSPHORUS; SEMICONDUCTOR JUNCTIONS; TRANSPORT PROPERTIES;

MOLYBDENUM COMPOUNDS;

EID: 84875194565     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4794802     Document Type: Article

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