Ab initio electronic properties of dual phosphorus monolayers in silicon

Nanoscale Research Letters

Volumn 9, Issue 1, 2014, Pages

  Drumm, Daniel W ^a,b   Per, Manolo C ^a,c   Budi, Akin ^b,d   Hollenberg, Lloyd CL ^b   Russo, Salvy P ^a  

^a RMIT UNIVERSITY   (Australia)

^b UNIVERSITY OF MELBOURNE   (Australia)

^c CSIRO   (Australia)

^d UNIVERSITY OF COPENHAGEN   (Denmark)

Author keywords

Ab initio; Bilayers; Density functional theory; Phosphorus in silicon

Indexed keywords

CALCULATIONS; ELECTRONIC PROPERTIES; MONOLAYERS; PHOSPHORUS; QUANTUM CHEMISTRY; SILICON;

AB INITIO; AB INITIO CALCULATIONS; BI-LAYER; DISORDERED SYSTEM; ELECTRONIC DENSITY; EPITAXIAL BILAYERS; EPITAXIAL TECHNOLOGIES; SILICON TECHNOLOGIES;

DENSITY FUNCTIONAL THEORY;

EID: 84908394758     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-9-443     Document Type: Article

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