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Physical Review Letters

Volumn 110, Issue 12, 2013, Pages

Ab initio electronic properties of monolayer phosphorus nanowires in silicon

(6) Drumm, D W a,b Smith, J S b Per, M C b,c Budi, A a Hollenberg, L C L a Russo, S P b

a UNIVERSITY OF MELBOURNE (Australia)

b RMIT UNIVERSITY (Australia)

c CSIRO (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; ATOMIC SCALE; EFFECTIVE MASS; ELECTRONIC DENSITY; FABRICATED SYSTEM; INTER-WIRE INTERACTIONS; SILICON TECHNOLOGIES; VERTICAL DIRECTION;

CALCULATIONS; EPITAXIAL GROWTH; MONOLAYERS; NANOWIRES; QUANTUM CHEMISTRY; REAL TIME SYSTEMS; SILICON; WIRE;

ELECTRONIC PROPERTIES;

EID: 84875308876 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.110.126802 Document Type: Article

Times cited : (17)

References (25)

1
- 0032116551
- SSELA5 0038-1101 10.1016/S0038-1101(97)00302-X
- J. R. Tucker and T.-C. Shen, Solid State Electron. 42, 1061 (1998). SSELA5 0038-1101 10.1016/S0038-1101(97)00302-X
- (1998) Solid State Electron. , vol.42 , pp. 1061
- Tucker, J.R.¹ Shen, T.-C.²

2
- 0035886535
- PRBMDO 0163-1829 10.1103/PhysRevB.64.161401
- J. L. O'Brien, S. R. Schofield, M. Y. Simmons, R. G. Clark, A. S. Dzurak, N. J. Curson, B. E. Kane, N. S. McAlpine, M. E. Hawley, and G. W. Brown, Phys. Rev. B 64, 161401(R) (2001). PRBMDO 0163-1829 10.1103/PhysRevB.64.161401
- (2001) Phys. Rev. B , vol.64
- O'Brien, J.L.¹ Schofield, S.R.² Simmons, M.Y.³ Clark, R.G.⁴ Dzurak, A.S.⁵ Curson, N.J.⁶ Kane, B.E.⁷ McAlpine, N.S.⁸ Hawley, M.E.⁹ Brown, G.W.¹⁰

3
- 79956021287
- 3 molecular precursors
- DOI 10.1063/1.1456949
- T.-C. Shen, J.-Y. Ji, M. A. Zudov, R.-R. Du, J. S. Kline, and J. R. Tucker, Appl. Phys. Lett. 80, 1580 (2002). APPLAB 0003-6951 10.1063/1.1456949 (Pubitemid 34268837)
- (2002) Applied Physics Letters , vol.80 , Issue.9 , pp. 1580
- Shen, T.-C.¹ Ji, J.-Y.² Zudov, M.A.³ Du, R.-R.⁴ Kline, J.S.⁵ Tucker, J.R.⁶

4
- 13244294188
- Nanoscale electronics based on two-dimensional dopant patterns in silicon
- DOI 10.1116/1.1813466
- T.-C. Shen, J. S. Kline, T. Schenkel, S. J. Robinson, J.-Y. Ji, C. Yang, R.-R. Du, and J. R. Tucker, J. Vac. Sci. Technol. B 22, 3182 (2004). JVTBD9 1071-1023 10.1116/1.1813466 (Pubitemid 40185095)
- (2004) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures , vol.22 , Issue.6 , pp. 3182-3185
- Shen, T.-C.¹ Kline, J.S.² Schenkel, T.³ Robinson, S.J.⁴ Ji, J.-Y.⁵ Yang, C.⁶ Du, R.-R.⁷ Tucker, J.R.⁸

5
- 25644459259
- The use of etched registration markers to make four-terminal electrical contacts to STM-patterned nanostructures
- DOI 10.1088/0957-4484/16/10/076, PII S0957448405014236
- F. J. Ruess, L. Oberbeck, K. E. J. Goh, M. J. Butcher, E. Gauja, A. R. Hamilton, and M. Y. Simmons, Nanotechnology 16, 2446 (2005). NNOTER 0957-4484 10.1088/0957-4484/16/10/076 (Pubitemid 41379170)
- (2005) Nanotechnology , vol.16 , Issue.10 , pp. 2446-2449
- Ruess, F.J.¹ Oberbeck, L.² Goh, K.E.J.³ Butcher, M.J.⁴ Gauja, E.⁵ Hamilton, A.R.⁶ Simmons, M.Y.⁷

6
- 34247252497
- Realization of atomically controlled dopant devices in silicon
- DOI 10.1002/smll.200600680
- F. J. Ruess, W. Pok, T. C. G. Reusch, M. J. Butcher, K. E. J. Goh, L. Oberbeck, G. Scappucci, A. R. Hamilton, and M. Y. Simmons, Small 3, 563 (2007). SMALBC 1613-6810 10.1002/smll.200600680 (Pubitemid 46624613)
- (2007) Small , vol.3 , Issue.4 , pp. 563-567
- Ruess, F.J.¹ Pok, W.² Reusch, T.C.G.³ Butcher, M.J.⁴ Goh, K.E.J.⁵ Oberbeck, L.⁶ Scappucci, G.⁷ Hamilton, A.R.⁸ Simmons, M.Y.⁹

7
- 33846809345
- Narrow, highly P-doped, planar wires in silicon created by scanning probe microscopy
- DOI 10.1088/0957-4484/18/4/044023, PII S0957448407307459
- F. J. Ruess, K. E. J. Goh, M. J. Butcher, T. C. G. Reusch, L. Oberbeck, B. Weber, A. R. Hamilton, and M. Y. Simmons, Nanotechnology 18, 044023 (2007). NNOTER 0957-4484 10.1088/0957-4484/18/4/044023 (Pubitemid 46212094)
- (2007) Nanotechnology , vol.18 , Issue.4 , pp. 044023
- Ruess, F.J.¹ Goh, K.E.J.² Butcher, M.J.³ Reusch, T.C.G.⁴ Oberbeck, L.⁵ Weber, B.⁶ Hamilton, A.R.⁷ Simmons, M.Y.⁸

8
- 77955228949
- NNAABX 1748-3387 10.1038/nnano.2010.95
- M. Fuechsle, S. Mahapatra, F. A. Zwanenburg, M. Friesen, M. A. Eriksson, and M. Y. Simmons, Nat. Nanotechnol. 5, 502 (2010). NNAABX 1748-3387 10.1038/nnano.2010.95
- (2010) Nat. Nanotechnol. , vol.5 , pp. 502
- Fuechsle, M.¹ Mahapatra, S.² Zwanenburg, F.A.³ Friesen, M.⁴ Eriksson, M.A.⁵ Simmons, M.Y.⁶

9
- 84862776787
- NNAABX 1748-3387 10.1038/nnano.2012.21
- M. Fuechsle, J. A. Miwa, S. Mahapatra, H. Ryu, S. Lee, O. Warschkow, L. C. L. Hollenberg, G. Klimeck, and M. Y. Simmons, Nat. Nanotechnol. 7, 242 (2012). NNAABX 1748-3387 10.1038/nnano.2012.21
- (2012) Nat. Nanotechnol. , vol.7 , pp. 242
- Fuechsle, M.¹ Miwa, J.A.² Mahapatra, S.³ Ryu, H.⁴ Lee, S.⁵ Warschkow, O.⁶ Hollenberg, L.C.L.⁷ Klimeck, G.⁸ Simmons, M.Y.⁹

10
- 84862908395
- SCIEAS 0036-8075 10.1126/science.1214319
- B. Weber, S. Mahapatra, H. Ryu, S. Lee, A. Fuhrer, T. C. G. Reusch, D. L. Thompson, W. C. T. Lee, G. Klimeck, L. C. L. Hollenberg, and M. Y. Simmons, Science 335, 64 (2012). SCIEAS 0036-8075 10.1126/science.1214319
- (2012) Science , vol.335 , pp. 64
- Weber, B.¹ Mahapatra, S.² Ryu, H.³ Lee, S.⁴ Fuhrer, A.⁵ Reusch, T.C.G.⁶ Thompson, D.L.⁷ Lee, W.C.T.⁸ Klimeck, G.⁹ Hollenberg, L.C.L.¹⁰ Simmons, M.Y.¹¹

11
- 58049105815
- RMPHAT 0034-6861 10.1103/RevModPhys.80.1517
- A. Fert, Rev. Mod. Phys. 80, 1517 (2008). RMPHAT 0034-6861 10.1103/RevModPhys.80.1517
- (2008) Rev. Mod. Phys. , vol.80 , pp. 1517
- Fert, A.¹

12
- 69249191571
- APPLAB 0003-6951 10.1063/1.3194778
- D. Culcer, X. Hu, and S. Das Sarma, Appl. Phys. Lett. 95, 073102 (2009). APPLAB 0003-6951 10.1063/1.3194778
- (2009) Appl. Phys. Lett. , vol.95 , pp. 073102
- Culcer, D.¹ Hu, X.² Das Sarma, S.³

13
- 0032516155
- A silicon-based nuclear spin quantum computer
- DOI 10.1038/30156
- B. E. Kane, Nature (London) 393, 133 (1998). NATUAS 0028-0836 10.1038/30156 (Pubitemid 28242245)
- (1998) Nature , vol.393 , Issue.6681 , pp. 133-137
- Kane, B.E.¹

14
- 0141749837
- PLRAAN 1050-2947 10.1103/PhysRevA.57.120
- D. Loss and D. P. DiVincenzo, Phys. Rev. A 57, 120 (1998). PLRAAN 1050-2947 10.1103/PhysRevA.57.120
- (1998) Phys. Rev. A , vol.57 , pp. 120
- Loss, D.¹ Divincenzo, D.P.²

15
- 2142820066
- PRBMDO 0163-1829 10.1103/PhysRevB.69.113301
- L. C. L. Hollenberg, A. S. Dzurak, C. Wellard, A. R. Hamilton, D. J. Reilly, G. J. Milburn, and R. G. Clark, Phys. Rev. B 69, 113301 (2004). PRBMDO 0163-1829 10.1103/PhysRevB.69.113301
- (2004) Phys. Rev. B , vol.69 , pp. 113301
- Hollenberg, L.C.L.¹ Dzurak, A.S.² Wellard, C.³ Hamilton, A.R.⁴ Reilly, D.J.⁵ Milburn, G.J.⁶ Clark, R.G.⁷

16
- 84860262684
- PRBMDO 1098-0121 10.1103/PhysRevB.85.155419
- D. W. Drumm, L. C. L. Hollenberg, M. Y. Simmons, and M. Friesen, Phys. Rev. B 85, 155419 (2012). PRBMDO 1098-0121 10.1103/PhysRevB.85.155419
- (2012) Phys. Rev. B , vol.85 , pp. 155419
- Drumm, D.W.¹ Hollenberg, L.C.L.² Simmons, M.Y.³ Friesen, M.⁴

17
- 15744388510
- Theoretical study of phosphorous δ-doped silicon for quantum computing
- DOI 10.1103/PhysRevB.71.045309, 045309
- G. Qian, Y.-C. Chang, and J. R. Tucker, Phys. Rev. B 71, 045309 (2005). PRBMDO 1098-0121 10.1103/PhysRevB.71.045309 (Pubitemid 40418093)
- (2005) Physical Review B - Condensed Matter and Materials Physics , vol.71 , Issue.4 , pp. 1-9
- Qian, G.¹ Chang, Y.-C.² Tucker, J.R.³

18
- 84875335010
- in IEEE, Piscataway
- H. Ryu, S. Lee, and G. Klimeck, in IEEE Proceedings of the 13th International Workshop on Computational Electronics (IEEE, Piscataway, 2009), Vol. 10.
- (2009) IEEE Proceedings of the 13th International Workshop on Computational Electronics , vol.10
- Ryu, H.¹ Lee, S.² Klimeck, G.³

19
- 84875319438
- in IEEE, Piscataway
- H. Ryu, S. Lee, B. Weber, S. Mahapatra, M. Y. Simmons, L. C. L. Hollenberg, and G. Klimeck, in Proceedings of the Silicon Nanoelectronics Workshop 2010, Honolulu, USA (IEEE, Piscataway, 2009), pp. 1 and 2.
- (2009) Proceedings of the Silicon Nanoelectronics Workshop 2010, Honolulu, USA , pp. 1
- Ryu, H.¹ Lee, S.² Weber, B.³ Mahapatra, S.⁴ Simmons, M.Y.⁵ Hollenberg, L.C.L.⁶ Klimeck, G.⁷

20
- 60949097880
- PRBMDO 1098-0121 10.1103/PhysRevB.79.033204
- D. J. Carter, O. Warschkow, N. A. Marks, and D. R. McKenzie, Phys. Rev. B 79, 033204 (2009). PRBMDO 1098-0121 10.1103/PhysRevB.79.033204
- (2009) Phys. Rev. B , vol.79 , pp. 033204
- Carter, D.J.¹ Warschkow, O.² Marks, N.A.³ McKenzie, D.R.⁴

21
- 79251541175
- NNOTER 0957-4484 10.1088/0957-4484/22/6/065701
- D. J. Carter, N. A. Marks, O. Warschkow, and D. R. McKenzie, Nanotechnology 22, 065701 (2011). NNOTER 0957-4484 10.1088/0957-4484/22/6/065701
- (2011) Nanotechnology , vol.22 , pp. 065701
- Carter, D.J.¹ Marks, N.A.² Warschkow, O.³ McKenzie, D.R.⁴

22
- 84896376253
- NRLAAD 1556-276X 10.1186/1556-276X-8-111
- D. W. Drumm, A. Budi, M. C. Per, S. P. Russo, and L. C. L. Hollenberg, Nanoscale Res. Lett. 8, 111 (2013). NRLAAD 1556-276X 10.1186/1556-276X-8-111
- (2013) Nanoscale Res. Lett. , vol.8 , pp. 111
- Drumm, D.W.¹ Budi, A.² Per, M.C.³ Russo, S.P.⁴ Hollenberg, L.C.L.⁵

23
- 84867825805
- PRBMDO 1098-0121 10.1103/PhysRevB.86.165123
- A. Budi, D. W. Drumm, M. C. Per, A. Tregonning, S. P. Russo, and L. C. L. Hollenberg, Phys. Rev. B 86, 165123 (2012). PRBMDO 1098-0121 10.1103/PhysRevB.86.165123
- (2012) Phys. Rev. B , vol.86 , pp. 165123
- Budi, A.¹ Drumm, D.W.² Per, M.C.³ Tregonning, A.⁴ Russo, S.P.⁵ Hollenberg, L.C.L.⁶

24
- 43049102068
- The SIESTA method; Developments and applicability
- DOI 10.1088/0953-8984/20/6/064208, PII S0953898408643325
- E. Artacho, E. Anglada, O. Diéguez, J. D. Gale, A. Garciá, J. Junquera, R. M. Martin, P. Ordejón, J. M. Pruneda, D. Sánchez-Portal, and J. M. Soler, J. Phys. Condens. Matter 20, 064208 (2008). JCOMEL 0953-8984 10.1088/0953-8984/20/6/064208 (Pubitemid 351622643)
- (2008) Journal of Physics Condensed Matter , vol.20 , Issue.6 , pp. 064208
- Artacho, E.¹ Anglada, E.² Dieguez, O.³ Gale, J.D.⁴ Garcia, A.⁵ Junquera, J.⁶ Martin, R.M.⁷ Ordejon, P.⁸ Pruneda, J.M.⁹ Sanchez-Portal, D.¹⁰ Soler, J.M.¹¹

25
- 84875340953
- See Supplemental Material at http://link.aps.org/supplemental/10.1103/ PhysRevLett.110.126802 for further details on the methodology employed, including model convergence data, and also on the simple two-parameter model describing the electron wave function falloff about the nanowire.

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