Quantum transport in ultra-scaled phosphorous-doped silicon nanowires

2010 Silicon Nanoelectronics Workshop, SNW 2010

Volumn , Issue , 2010, Pages

  Ryu, Hoon ^a   Lee, S ^a   Weber, B ^b   Mahapatra, S ^b   Simmons, M Y ^b,d   Hollenberg, L C L ^c,d   Klimeck, G ^a  

^a Purdue University   (United States)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

^c UNIVERSITY OF MELBOURNE   (Australia)

^d Australian Research Council Centre of Excellence for Quantum Computer Technology   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC REGIME; CHARGE POTENTIALS; DOPED SILICON; EXCHANGE-CORRELATIONS; EXPERIMENTAL DATA; FULL BAND; LOW TEMPERATURES; QUANTUM TRANSPORT; SCALING LIMITS; SELF-CONSISTENCY;

DOPING (ADDITIVES); NANOELECTRONICS; NANOWIRES; PHOSPHORUS; POISSON EQUATION; QUANTUM ELECTRONICS;

QUANTUM CHEMISTRY;

EID: 77957990634     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SNW.2010.5562585     Document Type: Conference Paper

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