Resistive switching effect in HfxAl1-xOy with a graded Al depth profile studied by hard X-ray photoelectron spectroscopy

Thin Solid Films

Volumn 563, Issue , 2014, Pages 20-23

  Matveyev, Yu A ^a,b   Markeev, A M ^a   Lebedinskii, Yu Yu ^a,b   Chouprik, A A ^a   Egorov, K V ^a   Drube, W ^c   Zenkevich, A V ^a,b  

^a MOSCOW INSTITUTE OF PHYSICS AND TECHNOLOGY   (Russian Federation)

^b NATIONAL RESEARCH NUCLEAR UNIVERSITY MEPHI   (Russian Federation)

^c DESY   (Germany)

Author keywords

Hard X ray photoelectron spectroscopy; HfxAl1 xOy; Memristor; Multilevel resistive switching; Oxygen vacancies; Potential distribution

Indexed keywords

ALUMINUM; ALUMINUM METALLOGRAPHY; ATOMIC LAYER DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC FIELDS; HAFNIUM COMPOUNDS; INTERFACE STATES; METAL INSULATOR BOUNDARIES; PHOTOELECTRONS; PHOTONS; SWITCHING; X RAY PHOTOELECTRON SPECTROSCOPY; X RAYS;

HARD X-RAY PHOTOELECTRON SPECTROSCOPY; HFXAL1-XOY; MEMRISTOR; MULTILEVEL RESISTIVE SWITCHING; POTENTIAL DISTRIBUTIONS;

OXYGEN VACANCIES;

EID: 84908068392     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2014.02.027     Document Type: Conference Paper

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