Multilevel resistive switching in ternary HfxAl 1-xOy oxide with graded Al depth profile

Microelectronic Engineering

Volumn 109, Issue , 2013, Pages 342-345

  Markeev, A ^a   Chouprik, A ^a   Egorov, K ^a   Lebedinskii, Yu ^b   Zenkevich, A ^a,b,c   Orlov, O ^d  

^a MOSCOW INSTITUTE OF PHYSICS AND TECHNOLOGY   (Russian Federation)

^b NATIONAL RESEARCH NUCLEAR UNIVERSITY MEPHI   (Russian Federation)

^c KURCHATOV INSTITUTE   (Russian Federation)

^d Molecular Electronics Research Institute and Micron Plant   (Russian Federation)

Author keywords

Electronic synapse; Gradient HfxAl1 xOy dielectrics; Resistive switching

Indexed keywords

CHARGED OXYGEN VACANCIES; ELECTRONIC SYNAPSE; EXTERNAL BIASING; I-V MEASUREMENTS; MULTILEVEL RESISTIVE SWITCHING; RESISTANCE SWITCHING; RESISTIVE SWITCHING; X RAY PHOTOEMISSION SPECTROSCOPY;

ATOMIC LAYER DEPOSITION; HAFNIUM; OXYGEN VACANCIES; PHOTOELECTRON SPECTROSCOPY; SWITCHING SYSTEMS;

ALUMINUM;

EID: 84876895003     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2013.03.084     Document Type: Article

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