Evolution of crystallographic ordering in Hf1-xAl xOy high-κ dielectric deposited by atomic layer deposition

Applied Physics Letters

Volumn 83, Issue 25, 2003, Pages 5271-5273

  Wiemer, C ^a   Fanciulli, M ^a   Crivelli, B ^b   Pavia, G ^b   Alessandri, M ^b  

^a LABORATORIO MDM   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; ANNEALING; CARRIER CONCENTRATION; COMPOSITION; COMPUTER SIMULATION; CRYSTAL ORIENTATION; CRYSTALLIZATION; CRYSTALLOGRAPHY; DIFFRACTION; HAFNIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS MATRIX; ATOMIC LAYER DEPOSITION; SELECTED AREA DIFFRACTION (SAD);

DIELECTRIC MATERIALS;

EID: 0942266877     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1635962     Document Type: Article

References (17)

1. G. Wilk, M. Green, M.-Y. Ho, B. Busch, T. Sorsch, F. Klemens, B. Brijs, R. van Dover, A. Kornblit, and T. Gustafsson, VLSI Tech. Dig. 9-4-1, 88 (2002).
2. R. Johnson, J. Hong, C. Hinkle, and G. Lukovsky, J. Vac. Sci. Technol. B 20, 1126 (2002).
3. H. Yu, N. Wu, M. Li, C. Zhu, B. Cho, D.-L. Kwong, C. Tung, J. Pan, J. Chai, W. Wang, D. Z. Chiu, C. H. Ang, J. Z. Zheng, and S. Ramanathan, Appl. Phys. Lett. 81, 3618 (2002).
4. M.-Y. Ho, H. Gong, G. Wilk, B. Busch, M. Green, W. Lin, A. See, S. Lahiri, M. Loomans, P. Raisanen, and T. Gustafsson, Appl. Phys. Lett. 81, 4218 (2002).
5. B. Crivelli, M. Alessandri, S. Alberici, F. Cazzaniga, D. Dekadjevi, W. Maes, G. Ottaviani, G. Pavia, G. Queirolo, and S. Santucci, Mater. Res. Soc. Symp. Proc. 745, N5.3.1 (2003).
6. M. Ritala, M. Leskela, L. Niinisto, T. Prohaska, G. Friedbacher, and M. Grasserbauer, Thin Solid Films 250, 72 (1994).
7. A. W. Ott, J. W. Klaus, J. Johnson, and S. M. George. Thin Solid Films 292, 135 (1997).
8. A. Gibaud, X-ray and Neutron Reflectivity: Principles and Applications. edited by J. Daillant and A. Gibaud, (Springer, Berlin, 1999).
9. P. Lysaght, B. Foran, G. Bersuker, P. Chen, R. Murto, and H. Huff, Appl. Phys. Lett. 82, 1266 (2003).
10. S. Ferrari, G. Scarel, and M. Fanciulli (unpublished).
11. S. Wolf and N. Tauber, Silicon Processing for the VLSI Era (Lattice Press, CA, 1999), Vol. 1, p. 215.
12. I. C. S. Database, files 79913 and 53034, Fachinformationzentrum Karlsruhe (2003).
13. I. C. S. Database, file 84375, Fachinformationzentrum Karlsruhe (2003).
14. M. Haverty, A. Kawamoto, K. Cho, and R. Dutton, Appl. Phys. Lett. 80, 2669 (2002).
15. S. Miyake, I. Shimizu, R. Manory, T. Mon, and G. Kimmel, Surf. Coat. Technol. 146, 237 (2001).
16. M.-H. Cho, Y. Roh, C. Whang, K. Jeong, S. Nahm, D.-H. Ko, J. Lee, N. Lee, and K. Fujihara, Appl. Phys. Lett. 81, 472 (2002).
17. X. Zhao and D. Vanderbilt, Phys. Rev. B 65, 233106 (2002).